A, B, C, D, E, F, G, H, I, J, K, L, M, N, O, P, Q, R, S, T, U, V, W, X, Y, Z,
| CCT | Continous Cooling transformation |
| A, | |
| abbr. | Abbreviation |
| AMS | Accelerator mass spectrometry |
| a | Activity |
| ai | Activity |
| AHSS | Advanced High Strength Steels |
| c | Affinity |
| AM 1,5 | Air mass |
| AM 1.5 | Air mass 1.5 |
| amatstud | Allgemeine Materialwissenschaft; students server |
| AC | Alternating current |
| AISI | American Iron and Steel Institute |
| ASCII | American Standard Code for Information Interchange |
| a-Si | Amorphous Si |
| w | Angular frequency |
| ARC | Anti-reflection coating |
| ASIC | Application specific IC |
| a.u. | Arbitrary units |
| AsH3 | Arsine |
| APCVD | Atmospheric pressure CVD |
| AF | Atomare Fehlstellen |
| AFM | Atomic force microscope |
| AFM | Atomic force microscope |
| AFM | Atomic force midcrsoscope |
| B, | |
| BSF | Back surface field |
| BH | Bake hardening steel |
| EG | Band gap |
| BP | Before Present time |
| µ | Beweglichkeit |
| BMP | Bitmap |
| bcc | Body centered cubic |
| bcc | Body centered cubic |
| bcc | Body centered cubic |
| bcc | body centered cubic lattice |
| k | Boltzmann's constant |
| k | Boltzmanns constant |
| k | Boltzmanns constant |
| k | Boltzmanns constant |
| kB | Boltzmanns constant |
| BPSG | Bor-Phosphorous silicite glass |
| BZ | Brillouin zone |
| BSI | British Standard Intitute |
| BMD | Bulk micro defect |
| BMD | Bulk micro defects |
| BMD | Bulk microdefects |
| K | Bulk modulus |
| BS | Bull shit |
| b | Burgers vector |
| C, | |
| CFC | Carbon fiber composite |
| CFC | carbon fiber composites |
| CNT | Carbon Nano Tubes |
| CNT | Carbon nanotube |
| CFP | Carbon-fiber-reinforced plastic |
| css | Cascading style sheet |
| CRT) | Cathode ray tube |
| CRT | Cathode ray tube |
| CRT) | Cathode ray tube |
| CRT | Cathode ray tubes |
| CEO | CEO |
| CCD | Charge coupled device |
| r | Charge density |
| r | Charge density |
| r | Charge density |
| µ | Chemcal potential |
| a | chemical dissolution rate |
| CDE | Chemical dry etching |
| CMP | Chemical mechanical polishing |
| CP | Chemical polish or concentrated piss |
| m | Chemical potential |
| µ | Chemical potential |
| m | Chemical potential |
| CVD | Chemical Vapor Deposition |
| CVD | Chemical vapor deposition |
| CMP | Chemical-mechanical polishing |
| CMP | Chemical-mechanical polishing |
| CEO | Chief executive officer |
| CAU | Christian-Albrechts-University in Kiel |
| CSL | Coincidence site lattice |
| CD | Compact disc |
| CD | Compact disc |
| CD | Compact disc |
| CMOS | Complementary metal oxide semiconductor technology |
| CMOS | Complementary MOS |
| K | Compression modulus |
| GIF | Compuserve format |
| CAE | Computer Aided Education |
| CP | Concentrated piss |
| s | conductivity |
| cw | Continous wave |
| CTT | Continous-Temperature-Transformation diagram |
| CIS | Copper Indium Di-selenide |
| CIS | Copper-Indium-Selenide |
| C | Coulomb |
| tcrit | Critical shear stress |
| TDBT | Critical temperature DTB |
| P | Crystal momentum |
| COPs | Crystal originated particles or pits |
| COP | Crystal originated particles or pits |
| COPs | Crystal originated particles or pits |
| c-Si | Crystalline Si |
| Si-c | Crystalline Si; used in the solar industry |
| CIGS | Cu - Ga - In - Se system; solar cells |
| CIGS | Cu-In/Ga-Se based solar cell |
| CB | Current burst |
| j | Current density |
| j | Current density |
| j | Current density |
| j | Current density |
| j | Current density |
| j | Current density |
| hcu | Current efficiency of light generation |
| CZ | Czochralski grown crystal |
| CZ | Czochralski grown crystals (Si) |
| CZ | Czochralski grown crystal |
| CZ | Czochralski grown crystals (Si) |
| CZ | Czochralski grown crystal |
| D, | |
| i.e. | Das heißt - that's to say; in other words |
| LDb | Debye length |
| DLTS | Deep level transisnt spectroscopy |
| e | Dehnung |
| DOS | Density of states |
| D | Density of States |
| DOE | Department of energy |
| DNA | Desoxyribonucleic acid |
| DFG: | Deutsche Forschungs Gemeinschaft |
| DFG | Deutsche Forschungsgemeinschaft |
| DIN | Deutsche Industrienorm |
| DK | Dielectric constant |
| td | Dielectric relaxation time |
| c | dielectric susceptibility |
| DK | Dielektrizitätskonstante; relative |
| DK | Dielektrizitätskonstante |
| DTA | Differential Thermo Analysis |
| D | Diffusion coefficient |
| D | Diffusion coefficient |
| L | Diffusion length |
| L | Diffusion length |
| DLP | Digital light processing |
| DVD | Digital versatile disc |
| DVD | Digital Video Digital Video / Versatile Disc |
| m | Dipole moment |
| m | Dipolmoment (manchmal) |
| DC | Direct current |
| DSC | Displacement shift complete |
| DSC | Displacement Shift Complete |
| DET | Divorced eutectoid transformation |
| vD | Drift velocity |
| DP | Dual phase steel |
| DBT | Ductile to brittle transition |
| DBT | Ductile-to-brittle (transition) |
| DRAM | Dynamic random access memory |
| DRAM | Dynamic random access memory |
| DRAM | Dynamic random access memory |
| DRAM | Dynamic random access memory |
| DRAM | Dynamic random access memory |
| E, | |
| EFG | Edge defined Film-fed (crystal) Growth |
| E | Elastizitätsmodul |
| E | Electrical field strength |
| D | Electrical flux density |
| EBIC | Electron beam induced current |
| EBIC | Electron beam induced current |
| n | Electron density |
| m | Electron mass |
| ESR | Electron spin resonance |
| ESP | Electronic stability program |
| ET&IT | Elektrotechnik und Informationstechnik |
| EC | Elementary cell |
| q | Elementary charge |
| EEG | Energieeinspeisegesetz |
| E | Energy |
| EF | Energy of formation |
| EDS | Energy-dispersive spectroscopy |
| EDX | Energy-dispersive X-ray spectroscopy |
| H | Enthalpy |
| HF | Enthalpy of Formation |
| S | Entropie |
| S | Entropy |
| S | Entropy |
| SF | Entropy of formation |
| EPROM | Eraseable and Programable Random Acess Memories |
| EWF | Erziehungswissenschaftliche Fakultät der CAU zu Kiel |
| EN | European Norm |
| EU | European union |
| hex | External efficiency of light generation |
| x | Extinction length |
| F, | |
| fcc | Face centered cubic |
| fcc | Face centered cubic |
| fcc | face centered cubic |
| fcc | Face centered cubic |
| (fcc) | Face centered cubic |
| fcc | Face centered cubic |
| fF/g | femto Farad per g |
| EF | Fermi energy |
| EF | Fermienergie |
| EF | Fermienergy |
| FOX | Field oxide |
| metafiles | Files about the script |
| FF | Fill factor; solar cell |
| FPD | Flat panel display |
| FZ | Float zone crystal |
| j | Flux of particles |
| F | Force |
| F | Force on a dislocation |
| ISiT | Fraunhofer Institut für Siliziumtechnologie |
| ISIT | Fraunhofer Institute for Si Technology |
| F | Free energy |
| G | Free enthalpy |
| G | Free enthalpy |
| G(p, T, N) | Free enthalpy |
| G | Free enthalpy |
| G | Free enthalpy (= Gibbs energy) |
| GF | Free enthalpy of formation |
| G | Freie Energie oder Enthalpie |
| FAQ | Frequently asked questions |
| f | Fugacity |
| Füllfaktor | Füllfaktor; Solarzelle |
| G, | |
| gn | Gain coefficient |
| R | Gas constant |
| GOX | Gate oxide |
| G | Generation rate |
| G | Generationsrate |
| g | Geometry factor |
| g | Geometry factor of the lattice for diffusion |
| GMR | Giant magneto resistance |
| GF | Gibbs energy or free enthalpy |
| GHz | Gigahertz |
| GMR | Gigantomagnetowiderstandseffekt |
| GPa | Gigapascals |
| GKSS | GKSS Forschungszentrum Geesthacht |
| GFC | Glass fiber composites |
| GFC | Glass fiber composites |
| GNP | Gross national product |
| GP zone | Gunnier-Preston zone |
| liquid manure | Gülle |
| H, | |
| n | Hauptquantenzahl |
| HAZ | Heat Affected Zone |
| hcp | hexagonal close packed |
| hcp | Hexagonal close packed |
| hcp | Hexagonal close packed |
| hcp | Hexagonal close packed |
| hcp | Hexagonally close packed |
| HF | High frequency |
| HID | High intensity discharge |
| HRTEM | High resolution TEM |
| HR | High Resolution TEM |
| HRTEM | High resolution TEM |
| HRTEM | High resolution transmission electron microscope |
| HRTEM | High Resolution Transmission Electron Microscope |
| HSD | High strength and Ductility |
| HRTEM) | High-resolution TEM |
| HRTEM | High-resolution TEM |
| HRTEM | High-Resolution Transmission Electron Microscopy |
| HSLA | High-strength low-alloy |
| HSLA | High-strength low-alloy |
| HSLA | High-Strength Low-Alloy steel |
| HOMO | Highest occupied molecular orbital |
| HF | Hochfrequenz |
| HIP | Hot isostatic pressure |
| HREF | HTML reference |
| HF | Hydrofluoric acid |
| html | Hyper Text Mark-Up Language |
| HTML | Hyper Text mark-up language |
| HTML | Hypertext Mark Up Language |
| HTML | Hypertext mark up language |
| HTML | Hypertext Mark Up Language |
| HTML | Hypertext mark-up language |
| I, | |
| i.e. | id est (that means) |
| IMPATT | Impact avalanche transit time |
| nV,i | In der Regel eine Konzentration |
| n | index of refraction |
| n | Index of refraction |
| ITO | Indium tin oxide |
| ITO | Indium tin oxide |
| ITO | Indium tin oxide |
| IR | Infra red |
| IR | Infrared |
| IR | Infrared |
| IR | Infrarot |
| k | Injection ration |
| IC | Integrated circuit |
| IC | Integrated circuit |
| IC | Integrated circuit |
| IQ | Intelligence quotient |
| IQ | Intelligence quotient |
| IC | Intergrated circuits |
| U | Internal energy; also used for enthalpy |
| i | Interstitial |
| i | Interstitial |
| IF | Interstitial free steel |
| ai | Intrinsic loss coefficient |
| I2 | Ion implantation |
| Fe | Iron |
| IS | Isotropic steel |
| J, | |
| JPEG | Joint Photographic Expert Group |
| J | Joule |
| n | Jump frequency |
| K, | |
| K | Kelvin |
| ksi | Kilopound per square inch |
| KZ | Koordinationszahl |
| L, | |
| PZT | Lead zirconate titanate |
| Laser | Light amplification by stimulated emission and resonance |
| LASER | Light Amplification by Stimulated Emission and Radiation |
| LASER | Light amplification by stimulated emission of radiation |
| Laser | Light amplification by stimulated emission and resonance |
| LBIC | Light beam induced current |
| LED | Light emitting diode |
| LED's | Light emitting diode |
| LED | Light emitting diode |
| LED | Light emitting diode |
| LED | Light emitting diode |
| LED | Light emitting diodes |
| LED | Light Emitting Diode |
| LPD | Light point defects |
| t(x,y,z) | Line vector |
| LCD | Liquid crystal display |
| LCD's | Liquid crystal display |
| LCD | Liquid crystal display |
| LCD | Liquid crystal display |
| LCD | Liquid crystal display |
| LCD | Liquid Crystal display |
| LCD | Liquid crystal display |
| LEC | Liquid encapsulation technique |
| L | Liquid phase |
| LCD | lLiquid Crystal Display |
| LOCOS | Local oxidation of Silicon |
| LLS | Localized light scattering defect |
| LLS | Localized light scattering defects |
| LLS | Localized light scattering defect |
| ld | Logarithm dualis |
| FL | Lorentz force |
| LPCVD | Low pressure CVD |
| Emin | lower critical field strength for ionic break through |
| LUMO | Lowest unoccpied molecular orbital |
| lm | Lumen |
| M, | |
| µr | Magnetic (relative) permeability of material |
| H | Magnetic field strength |
| B | Magnetic field strength |
| H | Magnetic field strength |
| B | Magnetic field strength |
| H | Magnetic field strength |
| B | Magnetic flux density |
| m | Magnetic moment |
| µo | Magnetic permeability of vacuum |
| J | Magnetic polarization |
| J | Magnetic polarization |
| J | Magnetic polarization |
| J | Magnetic polarization |
| J | Magnetic polarization |
| MRAM | Magnetic random access memory |
| MRI | Magnetic resonance imaging |
| cmag | Magnetic susceptibiity |
| µr | Magnetische (relative) Permeabilität eines Materials |
| H | Magnetische Feldstärke |
| J | Magnetische Polarisation |
| m | Magnetische Quantenzahl |
| M | Magnetisierung |
| M | Magnetization |
| MOKE | Magneto optic Kerr effect |
| MCP | Male Chauvinist Pig |
| MWG | Massenwirkungsgesetz |
| MPG | Max-Planck Gesellschaft |
| s | Mechanische Spannung |
| 16 Mbit | Megabit |
| MPa | Megapascals; meaning |
| Tm | Melting point |
| MOS | Metal - Silicon - Semiconductor transistor |
| MOS | Metal -Oxide-Semiconductor |
| MOCVD | Metal Organic CVD |
| MOS | Metal Oxide Semiconductor |
| MOS | Metal-oxide-semiconductor |
| MOS | Metal-oxide-semiconductor |
| MOS | Metall-Oxid-Semiconductor |
| MOS | Metall-Oxid-Semiconductor Transistor |
| MG-Si | Metallurgical grade Silicon |
| MA | micro alloy steel |
| MEMS | Micro Electro Mechanical Systems |
| MEMS | Micro electronic and mechanical systems |
| MEMS | Micro electronic and mechanical systems |
| MEMS | Micro Electronical and Mechanical Systems |
| ME | Microelectronic |
| MEMS | Microelectronic and mechanical systems |
| t | Minority carrier life time |
| µ | Mobility |
| µ | Mobility |
| µ | Mobility |
| µ | Mobility |
| µ | Mobility |
| µ | Mobility |
| µ | Mobility |
| µ | Mobility of carriers |
| m | Mobility of carriers |
| µ | Mobility of carriers |
| MBE | Molecular beam epitaxy |
| MPB | Morphological phase boundary |
| mc | Multi crystalline (s) |
| MP | Multi Phase |
| MQW | Multiple quantum wells |
| N, | |
| NEMS | Nano Electro Mechanical Systems |
| nm | Nanometer |
| l | Nebenquantenzahl |
| N | Newton |
| NMR | Nuclear magnetic resonance |
| NMR | Nuclear resonance tomography |
| NA | Numerical aperture |
| NA | Numerical aperture |
| O, | |
| OOP | Object oriented programming |
| OC | Open circuit |
| UOC | Open circuit voltage |
| hopt | Optical efficiency of light generation |
| OMEMS | Optical MEMS |
| OPC | Optical proximity correction |
| OLED | Organic LED |
| OLED's | Organic light emitting diode |
| OLED | Organic light emitting diode |
| OLED | Organic light emitting diodes |
| OLED | Organic light emitting diode |
| OSF | Oxidation induced stacking faults |
| OSF | Oxidation induced stacking fault |
| OSF | Oxidation induced stacking faults |
| COx | Oxide capacitance |
| ONO | Oxide-Nitride-Oxide |
| ONO | Oxide-nitride-oxide triple layer |
| ONO | Oxide-nitride-oxide layer sandwich |
| Jox | oxidizing current density |
| P, | |
| PMOS | p-channel MOS |
| pi | Partial pressure of component i |
| ppb | parts per billion |
| 2 ppt | parts per billion |
| ppb | parts per billion |
| ppm | parts per million |
| ppm | Parts per million |
| ppqt | Parts per quatrillion |
| ppqt | parts per quatrillion |
| ppt | parts per trillion |
| ppt | Parts per trillion |
| Pa | Pascal |
| e0 | Permittivity constant |
| PSB | Persistent slip band |
| PC | Personal Computer |
| PC | Personal Computer |
| PC | Personal computer |
| PC | Personal Computer |
| PC | Personal Computer |
| PSM | Phase shift mask |
| PSM | Phase shifting mask |
| P-steel | Phophorous steel |
| PH3 | Phosphine |
| PL | Photo luminescence |
| PV | Photo voltaic |
| PVT | Physical vapor transport |
| h | Planck's constant |
| h/2p | Plancks Constant / 2 pi |
| h | Plancksches Wirkungsqantum |
| PECVD | Plasma enhanced chemical vapor deposition |
| PO | Plasma oxide |
| PD | Point defect |
| n | Poisson's ratio |
| n | Poisson´s ratio |
| P | Polarisation |
| P | Polarization |
| PVA | Polyvinyl alcohol |
| PVC | Polyvinylchloride |
| PNG | Portable Network Graphic |
| PET | Positron Emission Tomography |
| U | Potentielle Energie |
| psi | Pounds per square inch |
| PPNA | PPNA |
| PPN | Pre-Pottery Neolithic |
| PPNA | Pre-Pottery Neolithic A |
| PPNB | Pre-Pottery Neolithic B |
| PPNC | Pre-Pottery Neolithic C |
| R(E) | probability functiion for closing of channels of current bursts |
| W(E) | probability function for break trought of current bursts |
| Q, | |
| Q | Q-factor |
| QEO | Quadrato electro-optic effect |
| hqu | Quantum efficiency of light generation |
| QW | Quantum well |
| q.e.d | Quod era demonstrantum (what was to be proven) |
| q.e.d | Quod era demonstrantum (what should be proven) |
| R, | |
| RADAR | RAdio Detection And Ranging |
| RF | Radio Frequency |
| RF | Radio frequency |
| RF | Radio frequency |
| RF MEMS | Radio frequency microelectromechanical systems |
| RTA | Rapid thermal annealing |
| RTP | Rapid thermal processing |
| RLZ | Raumladungszone |
| K | Reaction constant |
| RIBE | Reactive ion beam etching |
| RIE | Reactive ion etching |
| ROM | Read only memory |
| gh,k,l | Reciprocal lattcie vector |
| R | Recombination rate |
| RHEED | Reflection High Energy Electron Diffraction) |
| R | Rekombinationsrate |
| er | Relative dielectric constant; definition |
| t | Relaxation time |
| R&D | Research and Development |
| RGS | Ribbon growth on substrate |
| RT | Room temperature |
| RT | Room temperature |
| RMS | Root mean square |
| RBS | Rutherford back scattering |
| RBS | Rutherford backscattering |
| S, | |
| K | Scaling factor |
| SEM | Scanning electron microscope |
| SEM) | Scanning electron microscope |
| STM) | Scanning electron microscope |
| SEM | Scanning electron microscope |
| SEM | Scanning Electron Microscope |
| SEM | Scanning electron microscope |
| SEM | Scanning electron microscope |
| SEM | Scanning electron microscope |
| TEM | Scanning electron microscope |
| SEM | Scanning electron microscope |
| STEM | Scanning TEM |
| STEM | Scanning Transmission electron microscope |
| STM | Scanning Tunnel Microscopy |
| STM | Scanning tunneling microscope |
| STM | Scanning tunneling microscope |
| STM | Scanning tunneling microscope |
| s | Scattering cross section |
| SIMS | Secondary mass spectroccopy |
| kseg | Segregation coefficient |
| SWS | Semesterwochenstunden |
| SIA | Semiconductor Industry Association |
| ST | Semicondurctor technology |
| RSE | Series resistance; solar cell |
| STI | Shallow trench isolation |
| G | Shear modulus |
| G | Shear modulus |
| t | Shear stress in a glide plane |
| F | Short for formation |
| S | Siemens |
| SiO2 | Silicon dioxide |
| Si3 N4 | Silicon nitride |
| SOI | Silicon on insulator |
| SQW | Single quantum well |
| SFQR | Site flatness quality requirements |
| SAGB | Small-angle grain boundary |
| SAE | Society of Automotive Engineers |
| SC | Solar cell, Si |
| USD | Source-Drain Spannung |
| SCR | Space Charge Region |
| s | Specific conductivity |
| r | Specific resisitvity |
| r | Specific resistivity |
| s | Spin quantum number |
| SOG | Spin-on glass |
| s | Spinquantenzahl |
| r | Sprungrate |
| k | Ssegregation coefficient |
| SF | Stacking Fault |
| SI | Standard International system of units |
| SI | Standard International units |
| SRAM | Static random access memory |
| SKE | Steinkohleneinheit |
| e | Strain |
| b | Stromverstärkung des bipolar Transistors |
| SQUIDS | Superconducting quantum interference devices |
| UDD | Supply voltage of integrated circuits |
| Sg | Surface generation velocity |
| Sr | Surface recombination velocity |
| S-web | Suspended Web |
| SI | System International d'Unites |
| SZ | Süddeutsche Zeitung |
| T, | |
| TIF | Tagged image format |
| TF | Technische Fakultät der CAU zu Kiel |
| TV' | Television |
| T | Temperatur |
| ar | Temperature coefficient of resistivity |
| TMAH | Tetra-Methyl Ammonium Hydroxide |
| TEOS | Tetraethylorthosilicate |
| TI | Texas Instruments |
| TOE | Theory of everything |
| a | Thermal expansion coefficient |
| theses. | Thesen (sing. thesis; plur. theses) |
| neth | Threshold density |
| gth | Threshold value for the gain coefficient |
| Uthr | Threshold voltage ; MOS Transistor |
| TTT | Time-Temperature-Transformation |
| TTT | Time-Temperature-Transformation diagram |
| TRIP | Transformation Induced Plasticity steel |
| TRIP | Transformation-Induced Plasticity |
| A1 | Transition temperature |
| T = | Translation vector of a crystal lattice |
| TEM | Transmission electron microscope |
| TEM | Transmission electron microscopy |
| TEM | Transmission electron microscope |
| TEM | Transmission electron microscope |
| TEM | Transmission electron microscopy |
| TEM | Transmission electron microscope |
| TEM | Transmission electron microscopy |
| TEM | Transmission electron microscope |
| TEM | Transmission electron microscopes |
| TEM | Transmission electron microscope |
| TEM | Transmissionselektronenmikroskop(ie) |
| neT | Transparency density |
| TCO | Transparent conducting oxides |
| TCO | Transparent conductive oxide |
| TCO | Transparent conducting oxides |
| SiHCl3 | Trichlorosilane |
| W | Tungsten |
| STM | Tunneling scanning microscope |
| TWIP | Twinning Induced Plasticity |
| TWIP | Twinning Induced Plasticity |
| U, | |
| RM | Ultimate tensile strength |
| UHCS | Ultra High Carbon Steel |
| UHV | Ultra high vacuum |
| UV | Ultra violet |
| UHCS | Ultra-high carbon steel |
| UHV | Ultra-high vacuum |
| UHV | Ultra-high vacuum |
| UV | Ultraviolet |
| UV | Ultraviolet |
| UV | Ultraviolett |
| UFO | Unidentified Flying Object |
| S | Unit cell volume of CSL |
| Emax | upper critical field strength for ionic break through |
| U | Uranium |
| url | User resourc elocation |
| V, | |
| V | Vacancy |
| V | Vacancy; gleich Leerstelle |
| VLSI | Very large scale integration |
| HV | Vickers hardness |
| V | Volume |
| VIN | Vorlesung im Netz |
| W, | |
| W | Watt |
| y | Wave function |
| l | Wave length |
| k | Wavevektor |
| WYSIWYG | What You See Is What You Get |
| d | Width of space charge region |
| EA | Work function |
| Q | Workfunction |
| www | World Wide Web |
| X,Y,Z, | |
| e.g. | Zum Beispiel |
| ZGA | Zwischengittertaom |