|The "Electron Beam Induced Current method (EBIC) employs a (SEM) on a sample with a thin electron-transparent Schottky contact (usually evaporated Al). The Schottky contact is biased in reverse, the leakage current is amplified and displayed on a monitor synchronized with the electron beam scan.|
|The elecon beam induces carriers; the minority carriers either recombine at defects or are collected at the Schottky contact as current with the resulting signal being displayed on the monitor.|
|The picture on the monitor thus shows the efffective minority carrier life time. Defects that are "electronically active" reduce the currents; they appear in dark contrasts.|
|Principle of EBIC||Typical EBIC picture, showing electronically
active defects in solar-grade Si.
6.1.1 Observation of Dislocations and Other Defects
< Comparison of Anodic Etching to Chemical Etching and EBIC
© H. Föll (Defects - Script)