Principle of Electron Beam Induced Current Microscopy

The "Electron Beam Induced Current method (EBIC) employs a (SEM) on a sample with a thin electron-transparent Schottky contact (usually evaporated Al). The Schottky contact is biased in reverse, the leakage current is amplified and displayed on a monitor synchronized with the electron beam scan.

The elecon beam induces carriers; the minority carriers either recombine at defects or are collected at the Schottky contact as current with the resulting signal being displayed on the monitor.

The picture on the monitor thus shows the efffective minority carrier life time. Defects that are "electronically active" reduce the currents; they appear in dark contrasts.

Principle of EBIC

Typical EBIC picture, showing electronically
active defects in solar-grade Si.

With frame

6.1.1 Observation of Dislocations and Other Defects

< Comparison of Anodic Etching to Chemical Etching and EBIC