Doping and Mobility

	Shown are some standard diagrams (without detailed comment at present)
		The first graph gives an Arrhenius representation or Arrhenius plot of the intrinisc carrier concentration in Si and Ge for various approximations. The (small) effect of the T3/2 factor can be seen for Ge; it is reponsible for the bending of the rather straight line at high temperatures.

	The next plot shows the intrinsic carrier concentration of several semiconductors as a direct function of the temperature. Note that at room temperature there is a difference of about 7 orders of magnitude.

	This plot shows the dependance of the mobility on doping

	Here is the dependance of the mobility on temperature in the interesting T-range for Si

	This is the combined result of carrier concentration and mobility: The resisitivity of Si as a function of doping for electrons and holes separately.

To index

3.4.1 Junction Diodes

2.2.2 Doping and Carrier Concentration

3.3.2 Scaling Laws

Band-Bending and Surface Charge

Solution to 3.1.1

© H. Föll