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In the free electron gas model an
electron had the mass me (always
written straight and not in italics because it is not a variable but a
constant of nature (disregarding relativistic effects for the moment), and from
now on without the subscript e) - and that was all to
it. |
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If a force F acts on it, e.g. via
an electrical field E, in classical
mechanics Newtons laws applies and we can write |
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| F |
= e · E = m ·
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d2r
dt2 |
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With r = position vector of
the electron. |
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An equally valid description is possible using
the momentum p which gives us |
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Quantum
mechanics might be different from classical mechanics, so lets see
what we get in this case. |
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The essential relation to use is the identity of
the particle velocity with the the
group velocity
vgroup of the wave package that describes the particle
in quantum mechanics. The equation that goes with it is |
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| vgroup |
= |
1
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· Ñk
E(k) |
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Lets see what we get for the free electron gas
model. We had the following
expression for the energy of a particle; |
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| Ek = Ekin |
= |
2 ·
k2
2m |
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For vgroup we then
obtain |
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| vgroup |
= |
1
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·
k |
2 ·
k2
2m |
= |
·
k
m |
= |
p
m |
= |
vclassic |
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Since k
was equal to the momentum
p = mvclassic of the particle, we have
indeed vgroup = vclassic =
vphase as it should be. |
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In other
words: As long as the E(k) curve is a
parabola, all the energy may be interpreted
as kinetic energy for a particle with a
(constant) mass m. |
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Contrariwise, if the dispersion curve is not a parabola, not all the energy is kinetic energy
(or the mass is not constant?). |
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How does this apply to an electron in
a periodic potential? . |
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We still have the wave vector
k, but
k is no longer identical to
the momentum of an electron (or hole), but is considered to be a
crystal
momentum. |
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E(k) is no longer a
parabola, but a more complicated function. |
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Since we usually do not know the
exact E(k) relation, we seem to be stuck. However,
there are some points that we still can make: |
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Electrons at (or close to) the Brillouin zone in
each band are diffracted and form standing waves, i.e. they are described by
superpositions of waves with wave vector k and
k. Their group
velocity is necessarily close to zero! |
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This implies that ÑkE(k) at the
BZ must be close to zero too, which demands that the dispersion curve is
almost horizontal at this point. |
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The most important point is: We are not
interested in electrons (or holes) far away from the band edges. Those
electrons are just "sitting there" (in k-space)
and not doing much of interest; only electrons and holes at the band edges
(characterized by a wave vector kex)
participate in the generation - recombination process that is the hallmark of
semiconductors. |
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We are therefore only interested in the
properties of these electrons and holes, and consequently only that part of the
dispersion curve that defines the maxima or
minima of the valence band or conductance
band, respectively, is important. |
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The thing to do then is to expand the
E(k) curve around the points
kex of the extrema into a Taylor series,
written, for simplicities sake, as a scalar equation and with the terms after
k2 neglected. |
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| En(k)
= EV,C + k · |
¶En
¶k |
÷
÷ |
kex |
+ |
k2
2 |
· |
¶2 En
¶k2 |
÷
÷ |
kex |
+ .... |
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Since we chose the extrema of the dispersion
curve, we necessarily have |
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¶En
¶k |
÷
÷ |
kex |
= |
0 |
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En(kex) =
EV or EC |
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i.e. we are looking at the top of the valence and
the bottom of the conductance band. |
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This leaves us with |
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| En(k) = EV,C
+ |
k2
2 |
· |
¶2En
¶k2 |
÷
÷ |
kex |
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If we now consider only the conduction band and use its bottom as the
zero point of the energy scale, we have the same
quadratic relation in k as for the free electron gas,
provided we change the definition of the mass as follows: |
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1
2 |
· |
¶2En
¶k2 |
÷
÷ |
kex |
:= |
2
m* |
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which allows to rewrite the Taylor expansion for
the conduction band as follows |
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| EC(k) = 0 + |
2
2m* |
· k2 |
= |
2
2m* |
· k 2 |
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And this is the same form as the dispersion
relation for the free electron
gas! |
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However, since ¶2En/¶k2 may have arbitrary values, the effective mass m* of the particle
will, in general, be different from the regular electron rest mass m. |
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We therefore used the symbol
m* which we call the effective mass of the carrier and write it in
italics, because it is no longer a constant
but a variable. It is defined by |
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| m* = |
2
kex |
· |
1
¶2En/¶k2 |
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The decisive factor for the effective mass is
thus the curvature of the dispersion curve at the
extrema, as expressed in the second derivative. Large curvatures (=
large second derivative = small radius of
curvature) give small effective masses, small curvatures (= small second
derivative = large radius of curvature)
give large ones. |
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Lets look at what we did in a simple
illustration and then discuss what it all means. |
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Shown is a band diagram not unlike
Si. The true dispersion curve has been approximated in the extrema by
the parabola resulting from the Taylor expansion (dotted lines). The red ones
have a larger curvature (i.e. the radius of an inscribed circle is small); we
thus expect the effective mass of the electrons to be smaller than the
effective mass of the holes. |
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The
effective mass has nothing to do with a real mass; it is a
mathematical contraption. However, if we know the the dispersion curves (either
from involved calculations or from measurements), we can put a number to the
effective masses and find that they are not too different from the real
masses. |
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This gives a bit of confidence to the
following interpretation (which can be fully justified theoretically): |
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If we use the
effective mass m* of electrons and holes instead of
their real mass m, we may consider their behavior to be identical to
that of electrons (or holes) in the free electron gas model. |
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This applies in particular to their response to forces. In this
case, the deviation from the real mass takes care of the lattice part. |
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Taken to the extremes,
this may even imply zero or negative effective
masses (e.g. exactly at or near the BZ, where a force in
+x-direction may cause an electron to move in
x direction because of the diffraction). |
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We will not go into
more detail but give some (experimental) values for effective masses |
| Holes; m/m* |
| IV; IV-IV |
III-V |
II-VI |
IV-VI |
| C |
0,25 |
AlSb |
0,98 |
CdS |
0,80 |
PbS |
0,25 |
| Ge |
0,04 (0,28) |
GaN |
0,60 |
CdSe |
0,45 |
PbTe |
0,20 |
| Si |
0,16
(0,49) |
GaSb |
0,40 |
ZnO |
? |
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SiC
(a) |
1,00 |
GaAs |
0,082 |
ZnS |
? |
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GaP |
0,60 |
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InSb |
0,40 |
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InAs |
0,40 |
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InP |
0,64 |
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| Electrons; m/m* |
| IV; IV-IV |
III-V |
II-VI |
IV-VI |
| C |
0,2 |
AlSb |
0,12 |
CdS |
0,21 |
PbS |
0,25 |
| Si |
0,98
(0,19) |
GaN |
0,19 |
CdSe |
0,13 |
PbTe |
0,17 |
| Ge |
1,64
(0,082) |
GaSb |
0,042 |
ZnO |
0,27 |
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SiC
(a) |
0,6 |
GaAs |
0,067 |
ZnS |
0,40 |
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GaP |
0,82 |
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InSb |
0,014 |
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InAs |
0,023 |
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InP |
0,077 |
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If there are two values it simply
means that two dispersion curves (from
different branches in k-space) have an extrema at the same
point. |
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We already get a feeling that it may make a difference if
you work with electrons or holes in a certain device whenever you consider its
frequency limit: As soon as the carriers can no longer follow rapidly changing
forces (alternating electrical fields at high frequencies), the device will not
work anymore. |
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Small effective masses mean small (apparent)
inertia or high mobilities µ. Looking at one of the
many formulas for mobility,
µ = e · ts/ m, the
mobility goes up if we insert the (smaller) effective mass. It may thus be wise
to use p-doped Si if high frequencies matter (and everything else
does not matter). |
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We also notice that Ge has the
smallest efficient mass for holes! |
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This means that its holes respond more quickly to
the accelarating force of an electrical field and that means that they also can
change direction more quickly the holes in other semiconductors if the
electrical field changes its direction. |
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In other words: If speed only depends on the
effective mass of the carriers, Ge still "works" at high
frequencies when the other semiconductors have given up! |
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And that is, why we now (2004) see a
sudden revival of Ge, which after its brief period of glory in the end
of the fifties / beginning of the sixties of the 20th century, when it
was the one and only semiconductor used for single transistors, was all but
extinct. |
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© H. Föll (Semiconductor - Script)