List of Abbraviations

A, B, C, D, E, F, G, H, I, J, K, L, M, N, O, P, Q, R, S, T, U, V, W, X, Y, Z,

A,
a i Activity
B,
bcc Body centered cubic
kB Boltzmanns constant
BMD Bulk micro defect
K Bulk modulus
b Burgers vector
C,
µ Chemcal potential
µ Chemical potential
m Chemical potential
CSL Coincidence site lattice
tcrit Critical shear stress
COP Crystal originated particles or pits
D,
DLTS Deep level transisnt spectroscopy
D Diffusion coefficient
L Diffusion length
DSC Displacement shift complete
DRAM Dynamic random access memory
E,
EBIC Electron beam induced current
EBIC Electron beam induced current
ESR Electron spin resonance
EF Energy of formation
H Enthalpy
HF Enthalpy of Formation
S Entropy
SF Entropy of formation
x Extinction length
F,
(fcc) Face centered cubic
fcc Face centered cubic
j Flux of particles
F Force on a dislocation
F Free energy
G(p, T, N) Free enthalpy
G Free enthalpy (= Gibbs energy)
GF Free enthalpy of formation
f Fugacity
G,
R Gas constant
g Geometry factor
g Geometry factor of the lattice for diffusion
GF Gibbs energy or free enthalpy
H,
hcp hexagonal close packed
HRTEM High resolution TEM
HRTEM High-resolution TEM
HTML Hypertext mark up language
I,
i.e. id est (that means)
IR Infra red
IC Integrated circuit
IC Intergrated circuits
i Interstitial
J,
n Jump frequency
K,L,
LBIC Light beam induced current
LPD Light point defects
t(x,y,z) Line vector
M,
MOS Metal-oxide-semiconductor
MBE Molecular beam epitaxy
N,
NMR Nuclear magnetic resonance
O,
OSF Oxidation induced stacking faults
OSF Oxidation induced stacking fault
P,
pi Partial pressure of component i
ppb Parts per billion
PD Point defect
n Poisson´s ratio
Q,
q.e.d Quod era demonstrantum (what was to be proven)
R,
K Reaction constant
RBS Rutherford backscattering
S,
SEM Scanning electron microscope
STM Scanning tunneling microscope
SIMS Secondary mass spectroccopy
G Shear modulus
t Shear stress in a glide plane
F Short for formation
SAGB Small-angle grain boundary
SF Stacking Fault
e Strain
T,
TEM Transmission electron microscope
TEM Transmission electron microscopy
TEM Transmission electron microscope
U,
UHV Ultra high vacuum
S Unit cell volume of CSL
V,
V Vacancy

© H. Föll (Defects - Script)