5.4 Current flow through a non degenerated semiconductor

We investigate the charge flow in an electrical field for a non degenerated semiconductor. Combining the equations (5.18) and (5.21) we get

j→ = - q 4π3 ∫ V kτ(k→)v→(k→)∂f0 ∂E ⟨ (qE→ -∇ ⁡→rμ - (E -μ)∇ ⁡→r ln ⁡ (T)) ,v→⟩d3k.

(5.24)

We will neglect gradients in the temperature, so (E -μ)∇ ⁡→r ln ⁡ (T) vanishes. Since the semiconductor is not degenerated we can simplify the Fermi statistics by the Boltzmann statistics, i.e.

∂f0 ∂E = -f0 kT.

(5.25)

We take the band energies of the free electron gas

E = E0 + m* 2 |v→(k→)| 2, sov i = ℏ m*ki.

(5.26)

In addition we assume τ to be independent of k→. Summing up all approximations we find for the particle current

j→ = - qτℏ2 4π3kT(m*)2 [eE→ -∇ ⁡→μ]M~,

(5.27)

and M~ is a matrix with the components

M~ij = ∫ V kkikjf0(E(k))d3k = ∫ kdkk4f 0(E(k)) ∫ SkdΩkikj k2 .

(5.28)

Using k2 = k x2 + k y2 + k z2 and integrating over the surface of a sphere we get

∫ SkdΩkikj k2 = 4π 3 δij.

(5.29)

Using

dE = ℏ2 m*kdk,

(5.30)

the current density is written as

j→ = - qτ 3π2kTm* [qE→ -∇ ⁡→μ] (2m* ℏ2 ) ∫ E0∞dE(E -E 0)3 2 exp ⁡ (-E -μ kT ).

(5.31)

After partial integration we get

j→ = - qτ 3π2kTm* [qE→ -∇ ⁡→μ] (2m* ℏ2 ) - 3kT 2 ∫ E0∞dE(E -E 0)1 2 exp ⁡ (-E -μ kT ).

(5.32)

Taking into account the density of state of free electrons

D(E) = 1 2π2 (2m* ℏ2 ) 3 2 (E -E0)1 2 ,

(5.33)

we finally get

j→ = qτ m* [qE→ -∇ ⁡→μ]∫ E0∞dED(E)f 0(E) = qτne m* [qE→ -∇ ⁡→μ].

(5.34)