6.3.4 Summary to: 6.3 Physical Processes for Layer Deposition

Sputter deposition
Principle of sputtering deposition
Plasma technique Þ Vacuum + high voltage (and possible high frequency): complicated and expensive
Layers amorphous to highly defective Þ needs usually annealing after deposition.  
Very versatile because of easy control of layer composition by target composition  
Decent depositioen rates possible. Particularly suited to conductors.  
Coverage is not conformal!  
   
Ion implantation  
ion implanter schematic
Depth (< ca. 1 µm) and dose precisely controllable.  
Very compley and expensive  
Method od choice for making doped layers.
Introduces defects or destroys crystallinity Þ annealing at high T (> 800 oC) is a must
         
There are many more techniques for producing thin layers  
Comparison of contact hole filling
Comparing edge coverage
Evaporation. Relatively simple but limited as to materials and edgencoverage  
Molecular beam epitaxy. (MBE) Standard for III-V's  
Spin-on techniques ("Sol- Gel"). Used for making photo resist layers; occasionally for others  
Galvanics. Kind of crude but necessary for Cu interconnects in modern IC's  
Edge coverage may be the decisive property!  
Questionaire
Multiple Choice questions to all of 6.3

With frame Back Forward as PDF

© H. Föll (Semiconductor Technology - Script)