Poly-Silicon

Here is a large size rendering of the TEM picture of a 16 Mbit DRAM memory cell. A drawing of this cross section can be found in the link.

.Many details are not visible in this low magnification picture. Below we see the ONO layer between the two poly Si layers at high magnification

The two oxide layers appear white; the nitride layer dark

Next, we look at a trench capacitor "from above" and not in cross section.

Shown is the "simple" capacitor from the 4 Mbit DRAM generation. ONO us used as dielectric; and the substrate Si served as one electrode.

Again the poly electrode was oxidized for insulation and the trench filled with poly. The smaller (and dendritic) grain structure indicates that a large deposition rate (at somewhat higher pressure) was used; and a little hole remained unfilled in this case.

With frame

6.3.3 CVD for Poly-Silicon, Silicon Nitride and Miscellaneous Materials

Cross Section of 16 Mbit DRAM and 64 Mbit DRAM

Doping Trench walls