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This overview picture shows the "interphase"
structure of the NiSi2 - Si interface. |
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In the bright patches we have a direct epitaxial relationship, the network consists of a/2<110>
dislocations. split into partial dislocations, with extended and constricted dislocation nodes. This is exactly as we have
seen it before in the small angle grain boundary in Si, except
that the dislocations now are edge dislocations and not screw
dislocations! |
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In the darker areas the NiSi2 layer is twinned
with respect to the substrate. The dislocation network is composed of the a/6<112> dislocation of the
DSC lattice belonging to a S = 3 relation. The inset shows this network at higher
magnification. This, again, is quite similar to the splitting of
the small angle grain boundary on Si into a microtwin plus dislocation network. |
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© H. Föll (Defects - Script)
Complications in the Low Angle Twist Boundary on {111} 
With frame