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Desired Property | Materials not meeting requirement | Very good conductivity | All but Ag, Cu |
High eutectic temperature with Si (> 800 oC
would be good) | Au, Pd, Al, Mg | Low
diffusivity in Si | Cu, Ni, Li | Low oxidation rate; stable oxide | Refr. Metals, Mg, Fe, Cu, Ag |
High melting point | Al, Mg, Cu |
Minimal interaction with Si substrate | Pt, Pd, Rh, V, Ni , Mo, Cr (form silicides easily) | Minimal interaction with poly Si | Same as above |
No interaction with SiO2 | Hf, Zr,
Ti, Ta, Nb, V. Mg, Al | But must stick well to
SiO2 | ? | Must also
comply with other substrates, e.g. TiN | ? (see example for Al) | Chemical
stability, especially in HF environments | Fe, Co, Ni, Cu, Mg, Al |
Easy structuring | Pt, Pd, Ni, Co,
Au | Electromigration resistant | Al,
Cu | .... and many more,... | |
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