Chair of Nanoelectronics

In-situ Interface Investigations

Skizze eines experimentellen Aufbaues zur in-situ Untersuchung einer ferroelektrischen Grenzfläche mit weicher Röntgenstrahlung und einem Photoelectron-Emission-Microscope (PEEM)

Figure : Sketch of the experimental set-up of an in-siut experiement compromizing a ferroelectrtic capaciotr and a Photoelectron-Emission-Microscope (PEEM).



Electronic properties of nanoelectronic devices are mostly determined by their internal material interfaces. Common approaches often involve destructive preparation methods, which are needed to investigate these interfacial properties. Therefore we are developing novel in-situ methods to avoid the damage caused during preparation. Here the device of interest is magnetically and/or electrical fully functional while subject to an analytical experiment. An example for this approach is shown in Fig. 4. Here the sketch of ferroelectric capacitor with an extremely thin top (< 2 nm) electrode is shown. The device can be biased and is simultaneously subject to PEEM (Photo Electron Emission Microscopy) by using soft X-rays at a synchrotron beam line. The typical energy range for the x-Rays is in between 50 eV and 2 keV. By applying a bias voltage to the capacitors, or by switching the polarization state of the ferroelectric barrier, the interfacial band structure of the ferroelectric-top electrode might be modified. Any particular chemical and physical variations across the top interface in dependency of the applied bias and/or the polarization switching, may be detectable by the element specific PEEM. Especially orbital reconstructions and the present of the magneto electric interface effect (in case a magnetic top electrode) might be accessible.