Ultrathin Al1−xScxN for Low-Voltage-Driven Ferroelectric-Based Devices
Georg Schönweger, Md Redwanul Islam, Niklas Wolff, Adrian Petraru, Lorenz Kienle, Hermann Kohlstedt, Simon Fichtner
30 September 2022 - https://doi.org/10.1002/pssr.202200312

Stochastic behavior of an interface-based memristive device
Sahitya Yarragolla, Torben Hemke,Jan Trieschmann, Finn Zahari, Hermann Kohlstedt, Thomas Mussenbrock
Journal of Applied Physics 131, 134304 (2022); https://doi.org/10.1063/5.0084085

Digging deeper: Buried layers and interfaces studied by modified total electron yield and soft x-ray absorption spectroscopy
E. Kröger, A. Petraru, A. Hanff, R. Soni, M. Kalläne, J. D. Denlinger, T. Learmonth, J.-H. Guo, K. E. Smith, T. Schneller, B. Freelon, L. Kipp, H. Kohlstedt, K. Rossnagel and G. Kolhatkar
Appl. Phys. Lett. 120, 181601 (2022); https://doi.org/10.1063/5.0080289

Matter & Mind Matter
T Birkoben, H Kohlstedt
arXiv preprint arXiv:2204.12774 (2022)

Electrically Controlled Reversible Polarization Fatigue–Recovery in Ferroelectric Thin Film Capacitors
S Kale, A Petraru, H Kohlstedt, R Soni
ACS Applied Electronic Materials 4 (4), 1692-1702 (2022)

From Fully Strained to Relaxed: Epitaxial Ferroelectric Al1‐xScxN for III‐N Technology
G Schönweger, A Petraru, MR Islam, N Wolff, B Haas, A Hammud, C Koch, ...
Advanced Functional Materials, 210963 (2022)

Correlation between properties of direct current magnetron sputtered thin niobium nitride films and plasma parameters
R Marquardt, J Cipo, F Schlichting, G Kolhatkar, H Kohlstedt, H Kersten
Thin Solid Films 742, 139046 (2022)