GaN-based power transistors enable not only energy conversion with higher efficiency, leading to larger achievable power densities, but could also play a crucial role in the field of isolation/reconfiguration switches and variable passive components. Such components do not perform power conversion, but will enable for fault tolerance and self-healing capabilities in modular power conversion systems. The capabilities to replace a faulty cell or even to reconfigure it allowing fault-ride-through with consequent self-healing properties become particularly important as safety requirements and environmental concerns for electronic disposal rise and regulations request repairable systems. In this project, monolithically integrated bidirectional GaN-based switches will be developed and integrated into novel power electronic circuits to realize reparable dc/dc conversion systems. [read more]. 

With an interdisciplinary research effort, simultaneously focusing on device and topological aspects, a GaN-based MBS will be developed by the Compound Semiconductor Technology (CST) group of RWTH Aachen University. This MBS-GaN will be implemented as isolation and reconfiguration switch as well as a central component of a variable resonant-tank by the Chair of Power Electronics (CPE) of Kiel University (CAU).