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Basic Considerations for Process Integration |
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Draw a cross section of an integrated pnp-bipolar transistor! Denote in
the drawing all doping types and the purpose of the layers! |
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Compare an integrated bipolar transistor made with or without an epitaxial layer.
Describe advantages and problems of either approach. |
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Give a plot of the doping atom concentration as a function of depth for the kind of transistor
shown. Describe qualitatively but with rough numbers as far as possible
- Indicate the pn junctions in your drawing. Discuss their depth and distance in terms of process stability.
- Describe how the doping could be administered.
- Discuss possible problems encountered, in particular if the substrate doping is rather high.
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What function has a "buried layer" in bipolar technology? |
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Draw a cross section of two integrated p-MOSFET transistor! Denote in the
drawing the materials and the purpose of the decisive layers! Include typical lateral and vertical dimensions! Give key
requirements for the dielectrics! |
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Give a schematic drawing of a two-level metallization; make a list of the essential
process steps and enumerate the materials used in each step. |
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What exactly is a field oxide needed for? |
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What is the difference between MOS and CMOS? Compare a MOS
and CMOS inverter for this. |
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Draw a schematic cross-section of two complementary CMOS transistors next
to each other. Indicate the major difference to MOS. |
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© H. Föll (Semiconductor Technology - Script)
5.1.6 Summary to: 5.1 Basic Considerations for Process Integration 
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