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Growing single crystals of compound semiconductors is far more difficult than
for elemental semiconductors | |
GaAs:
150 mm wafers, encapsulation technique, disl. density (103 - 106) cm–2
GaP, InP
as GaAs but smaller and more expensive
SiC:
100 mm wafers, sublimation technique, several polytypes available, "pipe" defects |
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Precise stoichiometry is important |
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Vapor pressures if the constituents at the melting point might be very different |
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New kinds of defects might be encountered |
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Polytypie might be encountered |
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Major techniques are - Encapsulated CZ
- Sublimation growth
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© H. Föll (Semiconductor Technology - Script)
