10.5 Diamond



		Researchers at Japan's National Institute of Advanced Industrial Science and Technology (AIST) have synthesized an n-type semiconductor on a diamond (011)-oriented substrate, and achieved trial manufacturing of a UV light-emitting device (235nm wavelength) with a p-n junction. The semiconductor was created utilizing a plasma chemical-vapor deposition process, with methane as the source gas and doping with phosphorus atoms. P-type diamond semiconductors can be synthesized regardless of the substrate orientation, but previous n-type semiconductors had been developed only on a (111) oriented substrate. sst 5 June 05