 |
The big advantage of x-ray topography is that it
can reveal the defect structure of large samples, in the case below whole
(100 mm) Si wafers. If the negatives are enlarged, details on a
10 µm scale may be seen. |
|
|
|
|
|
|
 |
X-ray topography of a
Si wafer showing "haze" (milky area
in the upper right half) and dislocation structures. The isolated bright small
rectangles are transistors full of dislocations |
|
Enlargement of an area on the lower
left. Some single dislocations are barely visible; the bright geometric
structures correspond to device parts with high densities of dislocations. |
|
|
|
|
|
© H. Föll (Defects - Script)
To index
6.2.1 X-Ray Topography