Positron Life Time in Si and Ge

Hiere is the experimental demonstration that you do not find point defects with positron life time spectroscopy in Si and Ge.
TM denotes the melting point. There is no discernible influence of temperature on the positron life time.

With frame With frame as PDF

go to 4.1.1 Experimental Techniques for Studying Point Defects

© H. Föll (Defects - Script)