# Principle of Electron Beam Induced Current Microscopy

| The "Electron Beam Induced Current method (EBIC) employs a (SEM) on a sample with a thin electron-transparent Schottky contact (usually evaporated Al). The Schottky contact is biased in reverse, the leakage current is amplified and displayed on a monitor synchronized with the electron beam scan.
|  | The elecon beam induces carriers; the minority carriers either recombine at defects or are collected at the Schottky contact as current with the resulting signal being displayed on the monitor.
|  | The picture on the monitor thus shows the efffective minority carrier life time. Defects that are "electronically active" reduce the currents; they appear in dark contrasts.
|  | Principle of EBIC | Typical EBIC picture, showing electronically active defects in solar-grade Si.

With frame

6.1.1 Observation of Dislocations and Other Defects

< Comparison of Anodic Etching to Chemical Etching and EBIC

© H. Föll (Defects - Script)