# List of Abbraviations

A, B, C, D, E, F, G, H, I, J, K, L, M, N, O, P, Q, R, S, T, U, V, W, X, Y, Z,

A,
a i | Activity
B,
bcc | Body centered cubic
kB | Boltzmanns constant
BMD | Bulk micro defect
K | Bulk modulus
b | Burgers vector
C,
µ | Chemcal potential
µ | Chemical potential
m | Chemical potential
CSL | Coincidence site lattice
tcrit | Critical shear stress
COP | Crystal originated particles or pits
D,
DLTS | Deep level transisnt spectroscopy
D | Diffusion coefficient
L | Diffusion length
DSC | Displacement shift complete
DRAM | Dynamic random access memory
E,
EBIC | Electron beam induced current
EBIC | Electron beam induced current
ESR | Electron spin resonance
EF | Energy of formation
H | Enthalpy
HF | Enthalpy of Formation
S | Entropy
SF | Entropy of formation
x | Extinction length
F,
(fcc) | Face centered cubic
fcc | Face centered cubic
j | Flux of particles
F | Force on a dislocation
F | Free energy
G(p, T, N) | Free enthalpy
G | Free enthalpy (= Gibbs energy)
GF | Free enthalpy of formation
f | Fugacity
G,
R | Gas constant
g | Geometry factor
g | Geometry factor of the lattice for diffusion
GF | Gibbs energy or free enthalpy
H,
hcp | hexagonal close packed
HRTEM | High resolution TEM
HRTEM | High-resolution TEM
HTML | Hypertext mark up language
I,
i.e. | id est (that means)
IR | Infra red
IC | Integrated circuit
IC | Intergrated circuits
i | Interstitial
J,
n | Jump frequency
K,L,
LBIC | Light beam induced current
LPD | Light point defects
t(x,y,z) | Line vector
M,
MOS | Metal-oxide-semiconductor
MBE | Molecular beam epitaxy
N,
NMR | Nuclear magnetic resonance
O,
OSF | Oxidation induced stacking faults
OSF | Oxidation induced stacking fault
P,
pi | Partial pressure of component i
ppb | Parts per billion
PD | Point defect
n | Poisson´s ratio
Q,
q.e.d | Quod era demonstrantum (what was to be proven)
R,
K | Reaction constant
RBS | Rutherford backscattering
S,
SEM | Scanning electron microscope
STM | Scanning tunneling microscope
SIMS | Secondary mass spectroccopy
G | Shear modulus
t | Shear stress in a glide plane
F | Short for formation
SAGB | Small-angle grain boundary
SF | Stacking Fault
e | Strain
T,
TEM | Transmission electron microscope
TEM | Transmission electron microscopy
TEM | Transmission electron microscope
U,
UHV | Ultra high vacuum
S | Unit cell volume of CSL
V,
V | Vacancy

© H. Föll (Defects - Script)