Betreff: WG: Many thanks



-----Ursprüngliche Nachricht-----
Von: rfalster@memc.it [mailto:rfalster@memc.it]
Gesendet: Montag, 2. Juni 2003 13:49
An: hf@tf.uni-kiel.de
Betreff: Many thanks




Lieber Helmut,

hab 1000 Dank fuer alles letzte Woche.  Ich hab es sehr genossen und hoffe
bald wieder in Kiel zu sein.  Vielleicht wird es was!

Und wie versprochen, anbei einige neue (und noch unpublished) Papers.  Ich
schicke Dir auch per Post ein paar Kataloge von Susanne.

Bob


Punktdefekte, PerfectSilicon and Magic Denuded Zones:



Some references for the manuscripts:

R Falster, "Rapid Thermal Processing and the Engineering of Intrinsic Point
Defect Profiles and Silicon Materials Properties", Spring ECS Philadelphia,
Rapid Thermal and Other Short-Time Processing Symposium, Proceedings Vol
2002 ? 11, 2002, p.1.

VV Voronkov and R Falster, "Grown-in Microdefects in Silicon as a Guide to
the Properties of Point Defects",  ECS Fall Meeting 2002, High Purity
Silicon VII, PV2002-20, p 16.

M S Kulkarni, V Voronkov and R Falster, " Unsteady State Dynamics of Point
Defects and Formation of Microdefects in Czochralski Crystal Growth:
Modeling, Simulation and Experiments", ECS Fall Meeting 2002 High Purity
Silicon VII, PV2002-20, p 27.

R Falster, "Orthogonal Defect Solutions for Silicon Crystal Growth and
Wafer Procession", Solid State Phenomena, Vols 82-84, pp 9-16, (2002).



Dislocations:




A. Giannattasio, S. Senkader, R. J. Falster, and P. R. Wilshaw, "Generation
of dislocation glide loops in Czochralski silicon", J Phys: Condens Matter
14, 12981 (2002).

S Senkader, A Giannattasio, RJ Falster and PR Wilshaw, "Dislocation Locking
by Oxygen in Silicon : New Insights to Oxygen Diffusion at Low
Temperatures", ECS Fall Meeting 2002, High Purity Silicon VII, PV2002-20, p
171.


Nitrogen diffusion:





GOI (still)



R Falster, F Bonoli and VV Voronkov, "Dielectric breakdown distributions
for void containing silicon substrates", Microelectronics Reliability, Vol
41/7, 967 (2001).


Thermal Donors (believe it or not)




Oxygen precipitation:




VV Voronkov and R Falster, "Nucleation of oxide precipitates in
vacancy-containing silicon", J Appl Phys, 91, 5802 (2002).


Bob (See attached file: Falster-pssb.pdf)(See attached file: RFalster
manuscript spring ecs 2002 session Q1 revised.doc)(See attached file:
Saltlake ECS 2002 rev 1 with figures.doc)(See attached file: simulation
paper-fall ecs2002 final version.doc)(See attached file: JElectroChemSoc
2003 Paper on Defect Dynamics - final.doc)(See attached file: jap4126.pdf)
(See attached file: jap4289.pdf)(See attached file: JES00-02-007 published
paper.pdf)(See attached file: article - WoDiM.pdf)(See attached file:
GADEST 2003 Nitoutpf final final.doc)(See attached file: GADEST 2003
Nidigadf final final final version with figures.doc)(See attached file: RJF
GADEST 2001-5.rtf)(See attached file: falster_voronkov_mrs.pdf)(See
attached file: p759_s phil mag.pdf)(See attached file: JAP004803.pdf)(See
attached file: JAP03219-oxide particles.pdf)(See attached file: simulator
paper final version 05-2003.doc)(See attached file:
CusersArmandoArticle_bologna4.doc)(See attached file: ecs2002pap.pdf)(See
attached file: jap08097.pdf)(See attached file: JAP05062 - coupled
flux1.pdf)(See attached file: Nuclrtar-edited final version with
figures.doc)
