# Dislocation Network in a Si - NiSi2 Interface

| This overview picture shows the "interphase" structure of the NiSi2 - Si interface.
|  | In the bright patches we have a direct epitaxial relationship, the network consists of a/2<110> dislocations. split into partial dislocations, with extended and constricted dislocation nodes. This is exactly as we have seen it before in the small angle grain boundary in Si, except that the dislocations now are edge dislocations and not screw dislocations!
|  | In the darker areas the NiSi2 layer is twinned with respect to the substrate. The dislocation network is composed of the a/6<112> dislocation of the DSC lattice belonging to a S = 3 relation. The inset shows this network at higher magnification. This, again, is quite similar to the splitting of the small angle grain boundary on Si into a microtwin plus dislocation network.

With frame

8.2.1 Case Studies

Complications in the Low Angle Twist Boundary on {111}

© H. Föll (Defects - Script)