# Optoelectronics

| Optoelectronics includes all semiconductor devices which emit light through recombination of electrons and holes. Prime materials are GaAs, GaAlAs, GaP, InSb and generally all III - V semiconductors, but also GaN or SiC. More about optoelectronics can be found in an other Hyperscript.
|  | Again, in making optoelectronic devices, defect engineering is needed. Diffusion plays a major role; the precise atomic mechanisms are not too well understood at present.
|  | Moreover, defects in interfaces (= phase boundaries between different optoelectronic materials) play a major role; they essentially limit or prohibit applications in many cases.
| In contrast to Si microelectronics, defects may also play a role in the finished device while it is in operation. Dislocations, not wholly unavoidable in most III - V materials, may start to climb and degrade the function.
|  | Early Lasers diodes, e.g., stopped working after few hours of operation because defects evolved that served as recombination centers impeding radiant recombination.

With frame

3.1.1 Diffusion and Point Defects

8.1.1 Phase Boundaries

Microelectronics

© H. Föll (Defects - Script)