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| Desired
Property |
Materials
not meeting requirement |
| Very good conductivity |
All but Ag, Cu |
High eutectic temperature with Si
(> 800 oC would be good) |
Au, Pd, Al, Mg |
| Low diffusivity in Si |
Cu, Ni, Li |
| Low oxidation rate; stable oxide |
Refr. Metals, Mg, Fe, Cu, Ag |
| High melting point |
Al, Mg, Cu |
| Minimal interaction with Si substrate |
Pt, Pd, Rh, V, Ni , Mo, Cr (form silicides
easily) |
| Minimal interaction with poly Si |
Same as above |
| No interaction with SiO2 |
Hf, Zr, Ti, Ta, Nb, V. Mg, Al |
| But must stick well to SiO2 |
? |
| Must also comply with other substrates, e.g.
TiN |
? (see example for Al) |
| Chemical stability, especially in HF
environments |
Fe, Co, Ni, Cu, Mg, Al |
| Easy structuring |
Pt, Pd, Ni, Co, Au |
| Electromigration resistant |
Al, Cu |
| .... and many more,... |
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