### 2.3.3 Summary to: 2.3. III-V Semiconductors

| III-V semiconducrors combine the group III elements Al, Ga, In) with the group V elements N, P , As, Sb; giving 12 possible combinations. |  |
Properties | Si | GaAs | InP | GaP | GaN | In0,53Ga0,47As
--- | --- | --- | --- | --- | --- | ---
Band gap [eV] | 1,12 | 1,42 | 1,35 | 2,26 | 3.39 | 0,75
Type | Indirect | Direct | Direct | Indirect | Direct | Direct
Lattice | fcc | fcc | fcc | fcc | hex | fcc
|  | The most important ones are probably GaAs, InP GaP and GaN |
|  | Band gap energies and types vary; lattices are zincblende / sphalerite (= fcc) or wurtzite ( = hex). |
| Ternary and quaternary (IIIxIII1-xVyV1-y) compounds are relatively easy to make. |  |
|  | Properties like band gap, lattice constant, refractive index then adjustable to some extent. |
|  | Main materials for optoelectronic products. Some high-speed and sensor applications. |
|  | "Master diagram" = bandgap vs. lattice constant is of elementary importance for semiconductor technology. |
Exercise 2.3-1
All Class Exercises to 2.3

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