# Indexlist

A, B, C, D, E, F, G, H, I, J, K, L, M, N, O, P, Q, R, S, T, U, V, W, X, Y, Z,

A,
Abbreviations; Index of | [1], [2],
Absorption coefficient; measurement | [1], [2],
Acceleration sensor; MEMS | [1],
Accidental discoveries | [1],
Accumulation | [1], [2],
Actuator; MEMS | [1],
Actuators; electrostatic | [1],
Actuators; MEMS | [1],
Actuators; thermal | [1],
Adhesion | [1],
Advanced | [1], [2],
Affordability; of solar energy | [1],
Air bags; MEMS | [1],
Air mass; solar cell | [1],
Alignment for steppers | [1],
Alignment in lithography | [1],
American president | [1],
Amorphization by ion implantation | [1],
Amorphous Si | [1],
Amorphous thin films | [1],
Anisotropic chemical etching | [1],
Anisotropic eching | [1],
Anodic oxidation | [1],
Anti-reflection coating | [1],
Applications | [1],
Area; needed for solar power | [1],
Arsenic; elemental semiconductor | [1],
Arsine | [1], [2],
Art of crystal growing | [1],
Aspect ratio | [1],
Atomic force microscope | [1], [2],
Auger recombination | [1], [2],
Average roughness | [1],
B,
Back-end; MEMS | [1],
Back-surface field; solar cell | [1],
Backbone I module | [1], [2],
Backbone II module | [1], [2],
Band gap | [1],
Band gap; ternary compounds | [1],
Band-band recombination | [1], [2],
Bandgap engineering | [1],
Bandgap type; ternary compound | [1],
Bandgap; defining quality | [1],
Barrel reactor | [1],
Base of bipolar transistor | [1],
Base; of solar cell | [1], [2],
Basics modules | [1], [2],
Batch process | [1], [2],
Beamer | [1],
Beamers; and MEMS | [1],
Better; central credo | [1],
Bio fuel | [1],
Bipolar transistor | [1],
Bipolar transistors | [1],
Birds beak | [1],
Black art; CIGS solar cells | [1],
Black art; wet etching | [1],
Blue ray disc | [1],
Bold script for index words | [1], [2],
Bonding techniques | [1],
Books: Heuberger | [1],
Books: Muench | [1],
Books: Ohrring | [1],
Books: Smith | [1], [2],
Bosch process | [1],
Bosch: and MEMS | [1],
Buckling; of thin films | [1],
Buffer layer; solar cell | [1],
Buffer oxide | [1], [2],
Bulk microdefects | [1],
Bulk Si solar cell | [1],
Buried layer | [1],
C,
Cantilevers; and MEMS | [1],
Capacitive sensing | [1],
Capacitor dielectric | [1],
Capillary forces; MEMS | [1],
Car; and power | [1],
Carrier type and concentration; measurement | [1],
Casimir Effect; and NEMS | [1],
Casting; multi-crystalline Si | [1],
Cavities; and MEMS | [1],
Central credo; semiconductor technology | [1],
Chalcogenides; semiconductor | [1],
Channel in a MOS transistor | [1],
Cheaper; central credo | [1],
Chemical dry etching | [1],
Chemical etching; anisotropic | [1],
Chemical mechanical polishing | [1], [2],
Chemical properties | [1],
Chemical vapor deposition | [1],
Chemical-mechanical polishing | [1], [2],
Chemisorbtion | [1],
Chip | [1],
Chip area | [1],
Chip power dissipation | [1],
Chip size development | [1],
Chip; definition | [1],
Chip; factory for making | [1],
Chips | [1],
Chips; as components | [1],
CIGS production | [1],
Cleaning of equipment | [1],
Cleanroom | [1], [2],
cleanroom garments | [1],
Cleavage planes in semiconductors | [1],
Climate catastrophe | [1],
Climate change; and ST | [1],
Collector | [1],
Columnar grains in multi-crystalline Si | [1],
Columns in module matirx | [1], [2],
Comparison of feature size; of ICs | [1],
Compliant substrates | [1],
Components; and semiconductor technology | [1],
Compound semiconductors | [1], [2],
Compromising; the art of making solar cells | [1],
Concentrator solar cell | [1],
Conductivity; measurement | [1],
Conjugated bonds; org. semiconductors | [1],
Constant current generator; solar cell | [1],
Consumption; of energy | [1],
Contact angle | [1],
Contact hole | [1],
Contact resistance | [1],
Contacts; and solar cells | [1],
Convection | [1],
Copper-Indium-Gallium-Selenide; solar cell | [1], [2], [3],
Coriolis force | [1],
Corrosion resistance; measurements | [1],
Cost decrease; solar cell | [1],
Costs; of solar energy | [1], [2], [3],
Critical current density | [1], [2],
Critical siez; for nuclei | [1],
Cross-sensitivity;_sensor | [1], [2],
Crucible growth | [1],
Crystal defects in chips | [1],
Crystal detector radio | [1],
Crystral structures; of most semiconductors | [1],
Cu - In - Ga - Se - S compound | [1],
Cu - In - Se | [1],
Current matching; multi-junction solar cell | [1],
Czochralski | [1],
Czochralski method of crystal growth | [1],
Czochralski method; crystal growth | [1],
D,
Damped driven oscillator; and MEMS | [1],
Dangling bonds | [1], [2], [3],
Dash process | [1], [2], [3],
Deal-Grove model | [1],
Deep level recombination channel | [1],
Deep levels | [1],
Deep ultra-violet | [1],
Defect properties | [1],
Defect recombination | [1], [2],
Defects on chips. | [1],
Deflection detection; MEMS | [1],
Density and porosity; measurement | [1], [2],
Depletion | [1],
Depth of focus | [1],
Design rules | [1],
Designers | [1],
Desorption | [1],
Diamond structure | [1],
Diamond; elemental semiconductor | [1],
Dictionary English - German | [1], [2],
Dielectric breakdown field strength; measurements | [1],
Dielectric constant; of semiconductors | [1],
Dielectric failure | [1],
Dielectric function | [1],
Dielectric function; measurement | [1],
Diffractrometer, neutron; and Si | [1],
Diffusion barrier | [1], [2],
Diffusion lenght; IU characteristics | [1], [2],
Diffusion limited oxidation reaction | [1],
Diffusion profile | [1],
Diffusion; solar cell | [1],
Digital light processing | [1], [2],
Digital micromirror device | [1],
Digital versatile disc | [1],
Direct energy consumption | [1],
Direct recombination | [1], [2],
Direct sun light | [1],
Directionality of sunlight | [1],
Discontinuity; hetero junctions | [1],
Disloactions; and stress relaxation | [1],
Dislocations; as device killers | [1],
Display; OLED | [1],
Displays; optoelectronic | [1],
Doping by diffusion | [1],
Doping organic semiconductors | [1],
Doping; prime technical property | [1],
Dose of ion implantation | [1],
Drain | [1],
Drain of a MOS transistor | [1],
Driven damped oscillator; and MEMS | [1],
Dry etching | [1],
Dry etching; MEMS | [1],
Dry oxidation | [1],
Dynamic random access memory | [1], [2],
E,
Earth | [1],
Ecercises | [1], [2],
Edge coverage | [1],
Edge dislocations; and steps | [1],
Edge dislocations; misfit | [1],
Edge Isolation; solar cell | [1],
Edge rounding | [1],
Efficiency increase; solar cell | [1],
Efficiency; LED | [1],
Efficiency; of light generation | [1],
Efficiency; solar cell | [1], [2],
Efficiency;_of_solar_cell | [1],
Effusion cell | [1],
Elastic moduli; thin films | [1], [2],
Electrical break down field strength | [1],
Electrical breakdown | [1],
Electrical properties; thin films | [1], [2],
Electrochemical etching | [1],
Electrolyte; solar cell | [1],
Electromigration | [1],
Electron beam lithography | [1], [2],
Electron microcopes; for seeing | [1],
Electron microscope; scanning | [1],
Electronic grade Si | [1],
Electrostatic actuators | [1],
Elements; and semiconductors | [1],
Ellipsometer | [1],
Ellipsometry | [1],
Emerging technology; MEMS | [1],
Emitter of a bipolar transistor | [1],
Emitter; of a solar cell | [1], [2],
Emitter; of solar cell | [1],
Enabling device; Laser | [1],
Enabling technology; MEMS | [1], [2],
Energieeinspeisegesetz | [1],
Energy consumption | [1],
Energy crisis; and ST | [1],
Energy harvesting | [1],
Energy pay back time | [1],
Energy pay-back time; solar cells | [1],
Energy plants | [1],
Energy; definition | [1],
Energy; solar cell | [1],
Engineer mode | [1],
Epitaxial growth | [1],
Epitaxy | [1], [2],
Equipment | [1],
Equivalent circuit diagram of a solar cell | [1],
Etching structures | [1],
Etching techniques | [1],
Excimer lasers; for lithography | [1],
Exciton; and LED | [1],
Exciton; LED | [1],
Expansion of Si; at crystallization | [1],
Extreme UV lithography | [1],
F,
Feature size; of ICs | [1],
Feed_back;_Laser | [1],
Feed_back;_Laser_ | [1],
Fermi level pinning | [1],
Field oxide | [1], [2], [3],
Field strength | [1],
Fill factor, of a solar cell | [1], [2],
Fill factor; solar cell | [1],
First Laser condition | [1],
First law of material science | [1],
First silicon | [1], [2],
Fitting parameters; solar cell | [1],
Flat band MOS condition | [1],
Flat panel display | [1],
Flat panel display; OLED | [1],
Flat panel displays | [1],
Flats (on wafers) | [1],
Flats; on wafers | [1],
Float zone | [1], [2],
Flow glass | [1],
Focus depth | [1],
Force; capacitive | [1],
Format Hyperscript | [1], [2],
Fracture; for stress relaxation | [1],
Fracture; measurement | [1],
Frank-van der Merve growth mode | [1],
Fraunhofer Institute for Si Technology | [1],
Friction; MEMS | [1],
Front end; MEMS | [1],
Fundamental absorption | [1],
G,
g-sensors; MEMS | [1],
Galvanic techniques | [1],
Gate dielectric | [1], [2],
Gate electrode | [1], [2],
Gate of a MOS transistor | [1],
Gate oxide | [1],
Gate_oxide | [1],
Gate_oxide_ | [1],
Gear wheels; and MEMS | [1],
General properties of thin films; measurement | [1],
Generation sequence; of chips | [1],
Geometry and topology; measurement | [1],
Geometry; thin film | [1],
Germanium; crystal growth | [1],
Germanium; elemental semiconductor | [1],
Gettering | [1],
Gettering; solar cell | [1],
Global properties of solar cells | [1],
Gold leaf | [1],
Graetzel cell | [1],
Graetzel solar cell | [1],
Green house effect; and ST | [1],
Grid parity | [1],
Grid; solar cell | [1],
Gyro; process integration | [1],
H,
Hall coefficent | [1],
Heating with light | [1],
Hetero junction; CIGS | [1],
Hetero junctions | [1],
Hetero-junction; CIGS solar cell | [1],
Hexagonal structure | [1],
High explosives; and Si | [1],
High injection approximation | [1],
High resolution TEM | [1],
High-efficiency multi-junction solar cells | [1],
High-rate plasma etching | [1],
Highest occupied molecular orbital | [1],
Homo junction | [1],
Human hair; as thinness gauge | [1],
Humans | [1],
Hydrogen passivation | [1], [2],
Hyperscript; format of | [1], [2],
I,
Illustration modules | [1], [2],
Index grating | [1],
Index of abbreviations | [1], [2],
Index of key words | [1], [2],
Index of names | [1], [2],
Index of refraction; ternary compound | [1], [2], [3], [4],
Infra red optics | [1],
Injection ratio | [1],
Inkjet | [1],
Input; to sensor | [1],
Integrated capacitor | [1],
Integrated circuit | [1], [2], [3], [4],
Integrated circuits; and semiconductor properties | [1],
Integrated transistor | [1],
Intel | [1],
Interference color: thin film | [1],
Intergrated circuit | [1],
Intermetal dielectric | [1], [2],
Internal gettering | [1],
Intrinsic length scales | [1],
Inversion | [1], [2], [3],
Inverter; and CMOS | [1],
Ion beam lithography | [1],
Ion getter pumps | [1],
Ion implantation | [1], [2],
Island growth mode | [1],
J,
Jet engine; and power | [1],
Joule; definition | [1],
Junctions; and solar cells | [1],
K,
Key word index | [1], [2],
Kilogram standard; and Si | [1],
Knudsen effusion cell | [1],
L,
Large amounts of money: in chip production | [1],
Laser | [1],
Laser ablation | [1],
Laser diodes | [1],
Laser; and semiconductor property | [1],
Lattice constant ternary compounds | [1],
Lay-out of a chip | [1],
Layer deposition by sputtering | [1],
Layer plus island growth mode | [1],
Layer-by-layer growth mode | [1],
Layered semiconductors | [1],
Leads; on integrated circuits | [1],
Learning curve | [1], [2],
Li ion batteries; and porous Si | [1],
Life time; of LED's | [1],
Light emission | [1],
Light emitting diodes | [1], [2], [3],
Light; and power | [1],
Light; and solar cells | [1],
Light_emitting_diodes | [1], [2],
Limits of solar cell efficiency | [1],
Line | [1],
Liquid crystal display | [1], [2], [3], [4], [5],
Liquid encapsulation technique | [1], [2],
Liquid immersion lithography | [1],
Lithography | [1], [2],
Load management; solar cell | [1],
Load resistance; solar cell | [1],
Load; on solar cells | [1],
Local oxidation of Silicon | [1],
Local properties of solar cells | [1],
Low k dielectrics | [1],
Low pressure CVD | [1],
Lowest unoccupied molecular orbital | [1],
Lubrication; importance of | [1],
Lubrication; MEMS | [1],
Lumen; definition of unit | [1],
M,
Magic; and semiconductor technology | [1],
Magnetic resonance tomography | [1],
Magnetic sensing | [1],
Maser | [1],
Mask | [1],
Masking; with SiO2 | [1],
Masks for lithography | [1],
Master Graph; for semiconductors | [1],
Materials Research Society | [1],
Materials Scientists | [1],
Matrix of modules | [1], [2],
MBE | [1],
Measuring IV characteristics of solar cells | [1],
Measuring thin film thickness | [1],
Mechanical properties; measurement | [1], [2],
Melting point density anomaly, of Si | [1],
Membranes; and MEMS | [1],
MEMS products | [1],
MEMS specialities | [1],
Metallurgical grade Si | [1],
Metamaterials | [1],
Micro crystalline Si solar cell | [1],
Micro Electro Mechanical Systems | [1],
Micro electronic and mechanical systems; and semiconductor properties | [1],
Microelectronic; definition | [1],
Microfluidics | [1],
Micropipes; in SiC | [1],
Microrelectronic and mechanical systems | [1],
Minimal feature size | [1],
Mirrors, x-ray; and Si | [1],
Mirrors; Laser | [1],
Misfit dislocations | [1],
Misfit; and epitaxial growth | [1],
Mismatch thermal expansion coefficient | [1],
Misorientation; od substrates | [1],
Mobility; measurement | [1],
Module matrix | [1], [2],
Modules; solar cell | [1],
Molecular beam epitaxy | [1], [2], [3],
Money; and semiconductor technology | [1],
Money; and solar cells | [1],
Money; integral part of ST | [1],
Monochromatic light ; Laser | [1],
Moore's law | [1], [2],
Moore's law break down | [1],
MOS technology | [1],
MOS transistor; basics | [1],
MOS transistors | [1],
Movement; detection im MEMS | [1],
Mulit level metallization | [1],
Multi crystalline Si | [1], [2],
Multi crystalline solar cell | [1],
Multi junction solar cell | [1],
N,
n - channel MOS | [1],
n-channel MOS | [1],
Names: Indiex of | [1], [2],
Nano technology | [1],
Nanoparticles | [1],
Nanowires | [1],
Nanowires; Si | [1],
Native oxide | [1],
Necking process | [1],
Negative resists | [1],
Neutron diffractometer; and Si | [1],
Newton fringes | [1],
Nichia | [1],
Non-linear optical properties; measurement | [1],
Notch; on a wafer. | [1],
Notches (on wafers) | [1],
Nucleation of thin films | [1],
Nuclei; for thin film growth | [1],
Numerical aperture | [1],
O,
Oil resources | [1],
Open circuit voltage; solar cell | [1], [2],
Open circuit; solar cell | [1],
Optical fibres | [1],
Optical properties; thin films | [1], [2],
Optical sensing | [1],
Optical sensor | [1],
Optical sensors | [1],
Optics | [1],
Optics; thin film | [1],
Optimal working point; solar cell | [1], [2],
Optoelectronic, and thin films | [1],
Optoelectronics | [1],
Optoelectronics defined | [1],
Optoelectronics_ | [1],
Organic conductor | [1],
Organic LED's | [1],
Organic light emitting diode | [1], [2],
Organic semiconductors; solar cells | [1], [2], [3],
Oscillator; and MEMS | [1],
Osram | [1],
Oxidation induced stacking faults | [1],
Oxide capacitance | [1],
Oxide CVD | [1],
Oxide deposition | [1],
Oxide Nitride-Oxide triple layer | [1],
P,
p - channel MOS | [1],
Packaging MEMS | [1],
Parallel plate reactor | [1],
Parameter space; etching | [1],
Parasitic capacity | [1],
Parasitic transistors; in MOS | [1],
Particles | [1],
Particles_ | [1],
Passivation, of dangling bonds | [1],
Passivation; of Si devices | [1],
Passivation; solar cell | [1],
Pellicle | [1],
Penetration depth; of light | [1],
Phase boundary; hetero junction | [1],
Phase coherence; Laser | [1],
Phase diagram of quartz | [1],
Phosphine | [1], [2],
Phosphorous elemental semiconductor | [1],
Photo current; in junction | [1],
Photo potential; of junction | [1],
Photo resist | [1], [2], [3],
Photon; and quasi particles | [1],
Photonic crystals; and Si | [1],
Physical vapor transport; for SiC crystal growth | [1],
Physisorption | [1],
Piezoelectric materials; and MEMS | [1],
Piezoelectric_effect | [1],
Piezoresistive effect | [1],
Planarization | [1],
Planarization; and MEMS | [1],
Planet | [1],
Plasma | [1],
Plasma enhanced CVD | [1],
Plasma etching | [1],
Plasma etching; MEMS | [1],
Plasma oxide | [1],
Plastic deformation; stress relief | [1], [2],
pn-junction; for solar cells | [1],
POCl process | [1], [2],
Polariton; uses | [1],
Poly | [1],
Poly Si for crystal growth | [1],
Poly silicon: Variants | [1],
Polyimide | [1],
Polysilicon layers | [1],
Polytypes; of SiC | [1],
Polytypie | [1],
Porous silicon | [1],
Positive resist | [1],
Power plant | [1],
Power; defintion | [1],
Power; solar cell | [1],
Power;_and_optoelectronics | [1],
Pressure sensor; MEMS | [1],
Price per function | [1],
Primary energy | [1],
Printing contacts; solar cell | [1],
Process flow | [1],
Process integration | [1],
Process steps | [1],
Process window | [1],
Process-induced defects | [1],
Processing time; solar cell | [1],
Product; result of ST | [1],
Products | [1],
Products; and semiconductor technology | [1],
Products; MEMS | [1],
Properties; thin film | [1],
Pumping a Laser | [1],
Pumping, Laser | [1],
Q,
Quantity; of energy | [1],
Quantum efficiency; LED's | [1],
Quantum wire | [1],
Quantum wire; Si | [1],
Quartz | [1],
Quartz; phase diagram | [1],
Quasi Fermi energy | [1],
Quasi particles | [1], [2], [3],
Quaternary compound semiconductors | [1],
R,
Radio frequency = high frequency | [1],
Radio frequency identification device | [1],
Radius of curvature; film stress | [1],
Rapid thermal processing | [1],
Raw silicon | [1],
RC time constant | [1],
Reacitvity; measurement | [1],
Reactive ion beam etching | [1],
Reactive ion etching | [1],
Reactive sputtering | [1],
Reactivity of Si | [1],
Recombination center | [1],
Recombination channel | [1], [2],
Recombination coefficient | [1],
Recombination volume | [1],
Recombination zone | [1], [2],
Reconstruction_surface | [1],
Red-Green-Blue | [1],
Reflectometry | [1],
Reliability; and MEMS | [1],
Resist | [1], [2],
resist development | [1],
Resists | [1],
Resolution limit | [1],
Resonance; in MEMS gyros | [1],
Reticle | [1], [2],
Reticles | [1],
Reverse dark current; solar cell | [1],
RF MEMS | [1],
Rock crystal | [1],
Roor mean square; for measuring roughness | [1],
Rough substrates | [1],
Roughness; average | [1],
Roughness; root mean square | [1],
Rows in module matrix | [1], [2],
Rutherford back scattering | [1],
S,
Sacrificial layer | [1],
Sacrificial layers | [1],
Samsung | [1],
Saving the world | [1],
Scanning electron microscope | [1],
Scanning Tunneling Microscope | [1], [2], [3],
Scanning_electron_microscope | [1],
Screen oxide | [1],
Screen-printing | [1],
Secondary energy | [1],
Seed crystal | [1],
Segregation coefficient | [1],
Selectivity in etching | [1],
Selectivity; of etching rates | [1],
Selectivity;_sensor | [1],
Selenium; elemental semiconductor | [1], [2], [3],
Semiconductor Industry Association | [1],
Semiconductor Laser | [1],
Semiconductors; and components or products | [1],
Sensor; MEMS | [1],
Sensors; and semiconductor properties | [1],
Sensors; MEMS | [1],
Series resistance | [1],
Series resistance; solar cells | [1], [2], [3],
Shallow trench isolation | [1], [2],
Short circuit current; solar cell | [1], [2], [3],
Short circuit; solar cell | [1],
Shrink strategy | [1],
Shunt resistance | [1],
Shunt resistance; solar cell | [1],
Shunt resistor | [1],
Shunt; in solar cells | [1],
Si precipitates | [1],
Siemens | [1],
Siemens AG | [1], [2],
Siemens process | [1], [2],
Signal LED's | [1], [2],
Silicide | [1],
Silicon | [1], [2],
Silicon nitride | [1],
Silicon on insulator | [1], [2],
Silicon; elemental semiconductor | [1],
Silicondioxide | [1], [2],
Silicone nitride | [1],
Silicone nitride deposition | [1],
Sintering contacts; solar cells | [1],
Sintering; for solar cell contacts | [1],
SiO2; phase diagram | [1],
Slave; and power | [1],
Slave; as energy source | [1],
Snell's law | [1],
So crystasl | [1],
Solar cell; amorphous Si | [1],
Solar cell; and semiconductor property | [1],
Solar cells | [1],
Solar cells; alterative substrates | [1],
Solar cells; as market drivers | [1],
Solar cells; thin film | [1],
Solar energy | [1],
Solar grade Si | [1],
Source | [1],
Source of a MOS transistor | [1],
Space chareg region; of solal cell | [1],
Specific heat; measurement | [1],
Sphalerite | [1], [2], [3],
Spike | [1],
Spiking | [1],
Spin-on coating | [1],
Spin-on glass | [1], [2], [3],
Spin-on technique | [1],
Spontaneous emission of a photon | [1],
Sputtering | [1],
Sputtering techniques | [1],
Staebler-Wronski effect | [1],
Standard international unit | [1],
Standing wave, Laser | [1],
Stepper | [1], [2],
Steps; atomic | [1],
Sticking coefficient | [1], [2],
Stiction | [1],
Stiction; and gas etching | [1],
Stimulated emission of a photon | [1],
Stoney formula | [1],
Stop planes; anisotropic etchung | [1],
Storage; of energy | [1],
Stranski-Krastanov growth mode | [1],
Stress and strain; measurement | [1],
Stress avoidance; MEMS | [1],
Stress relaxation | [1],
Stress, strain detection; MEMS | [1],
Sun | [1],
Surface cleaning; solar cell | [1],
Surface reconstruction | [1],
Surface roughening; solar cell | [1],
Surface tension | [1],
T,
Table of Contents | [1], [2],
Tandem cells | [1],
Target | [1],
Teflon: bad adhesion | [1],
Temperature budget | [1],
Terawatt; the global power unit | [1],
Ternary compound semiconductors | [1],
Terra | [1],
Tetraethylorthosilicate | [1],
Thermal actuators | [1],
Thermal conductivity | [1], [2], [3],
Thermal couples; MEMS | [1],
Thermal expansion coefficient; measurement | [1], [2],
Thermal properties; measurement | [1],
Thermal ransfer | [1],
Thermal_oxidation | [1],
Thermal_oxidation_ | [1],
Thermoelectric coefficients | [1],
Thermoelectric devices; and semiconductor property | [1],
Thick film technology; definition | [1],
Thickness, roughness; measurements | [1],
Thin film Si solar cell | [1],
Thin film solar cells | [1],
Thin film technology; definition | [1],
Thin film; meaning | [1],
Thin films; special structures | [1],
Thin flims | [1],
Three level system | [1],
Threshold voltage | [1],
Time constant | [1],
Time constant: from RC | [1],
Titanium Nitride | [1],
Toaster; and power | [1],
Topology; thin film | [1],
Transistor radio | [1],
Transistors; in IC | [1],
Transmisison electron microscope | [1],
Transmission electron microscope | [1],
Transparent conductive oxide; solar cell | [1],
Trench_capacitor | [1],
Trench_capacitor_ | [1],
Trichlorosilane | [1],
Trichlorosilane_ | [1],
Triple junction solar cell | [1],
Tungsten | [1],
Tungsten CVD | [1],
Two diode model; of solar cell | [1],
U,
Ultra-high vacuum; MBE | [1],
Ultraviolet light | [1],
Uncertainty relaltion; for Lasers | [1],
Uniformity: measurement | [1],
Unipolar transistors | [1],
Universal solvent; Si as | [1],
Uranium | [1],
V,
van der Waaks bonding | [1],
Very large scale integration | [1],
Via; connectio between two metal layers in ICs | [1],
Viscous flow; and stress relaxation | [1],
Visible light | [1],
Vollmer-Weber growth mode | [1],
W,
Wacker Siltronic | [1], [2],
Wafer | [1], [2],
Wafer flat | [1],
Wafer, definition | [1],
Wafer; Si | [1],
Wafers | [1],
Wafer_bonding;_MEMS | [1],
Warpage; of substrates | [1],
Watch, mechanical; and Si | [1],
Water glass | [1],
Watt; definition | [1],
Wavelength; LED's | [1],
Well; for CMOS | [1],
Wet oxidation | [1],
Wetting | [1],
Wetting angle | [1], [2],
White light; and LED | [1],
Width of base region; parameter or speed | [1],
Workfunction; measurement | [1],
Working point; of solar cell | [1],
World; saving the | [1],
Wrong terms in micro electronics | [1],
Wurtzite | [1],
Wurtzite; definition | [1],
Würth, Reinhold | [1],
X,
X-ray lithography | [1],
X-ray mirrors; and Si | [1],
Y,
Yield | [1], [2],
Yield; in chip factory | [1],
Z,
Zinc blende | [1], [2],
Zinc blende; definition | [1],
Zone melting | [1],

© H. Föll (Semiconductor Technology - Script)