### 4.2.3 Summary to: 4.2 Other Semiconductor Growth Technologies

| Growing single crystals of compound semiconductors is far more difficult than for elemental semiconductors |  |
GaAs: 150 mm wafers, encapsulation technique, disl. density (103 - 106) cm–2 GaP, InP as GaAs but smaller and more expensive SiC: 100 mm wafers, sublimation technique, several polytypes available, "pipe" defects
|  | Precise stoichiometry is important |
|  | Vapor pressures if the constituents at the melting point might be very different |
|  | New kinds of defects might be encountered |
|  | Polytypie might be encountered |  |
| Major techniques are Encapsulated CZ Sublimation growth |  |
Exercise 4.2-1
All Questions to 4.2

© H. Föll (Semiconductor Technology - Script)