### 6.3.4 Summary to: 6.3 Physical Processes for Layer Deposition

| Sputter deposition |  |
|  | Plasma technique Þ Vacuum + high voltage (and possible high frequency): complicated and expensive |
|  | Layers amorphous to highly defective Þ needs usually annealing after deposition. |
|  | Very versatile because of easy control of layer composition by target composition |
|  | Decent depositioen rates possible. Particularly suited to conductors. |
|  | Coverage is not conformal! |
| Ion implantation |  |
|  | Depth (< ca. 1 µm) and dose precisely controllable. |
|  | Very compley and expensive |
|  | Method od choice for making doped layers. |
|  | Introduces defects or destroys crystallinity Þ annealing at high T (> 800 oC) is a must |
| There are many more techniques for producing thin layers |  |
Comparing edge coverage
|  | Evaporation. Relatively simple but limited as to materials and edgencoverage |
|  | Molecular beam epitaxy. (MBE) Standard for III-V's |
|  | Spin-on techniques ("Sol- Gel"). Used for making photo resist layers; occasionally for others |
|  | Galvanics. Kind of crude but necessary for Cu interconnects in modern IC's |
|  | Edge coverage may be the decisive property! |
Questionaire
Multiple Choice questions to all of 6.3

© H. Föll (Semiconductor Technology - Script)