# LOCOS with Sacrificial Poly-Silicon

| Here is a comparison of the LOCOS process with and without some sacrificial poly-Si:
|  | Provided, some of the oxide is removed by an "etch-back" process, the lateral extension can be kept somewhat smaller than in the conventional case.
| While this makes things quite complicated, the final versions of the LOCOS process were even more complicated.

With frame

6.1.2 LOCOS Process

© H. Föll (Semiconductor Technology - Script)