# List of Abbraviations

A, B, C, D, E, F, G, H, I, J, K, L, M, N, O, P, Q, R, S, T, U, V, W, X, Y, Z,

A,
abbr. | Abbreviation
AM 1.5 | Air mass
AM 1.5 | Air mass 1.5
AC | Alternating current
a-Si | Amorphous Si
ARC | Anti-reflection coating
ASIC | Application specific IC
AsH3 | Arsine
APCVD | Atmospheric pressure CVD
AFM | Atomic force microscope
B,
BSF | Back surface field
BPSG | Bor-Phosphorous silicite glass
BMD | Bulk micro defects
C,
CRT | Cathode ray tube
CCD | Charge coupled device
CDE | Chemical dry etching
CMP | Chemical mechanical polishing
CVD | Chemical Vapor Deposition
CMP | Chemical-mechanical polishing
CAU | Christian-Albrechts-University in Kiel
CD | Compact disc
CMOS | Complementary metal oxide semiconductor technology
CMOS | Complementary MOS
CIS | Copper-Indium-Selenide
COPs | Crystal originated particles or pits
c-Si | Crystalline Si
CIGS | Cu - Ga - In - Se system; solar cells
CIGS | Cu-In/Ga-Se based solar cell
CZ | Czochralski grown crystals (Si)
CZ | Czochralski grown crystal
D,
DOE | Department of energy
DVD | Digital Video Digital Video / Versatile Disc
DLP | Digital_Light_Processing
DC | Direct current
DRAM | Dynamic random access memory
DRAM | Dynamic random access memory
E,
ESP | Electronic stability program
EEG | Energieeinspeisegesetz
EU | European union
F,
fcc | Face centered cubic
fF/g | femto Farad per g
FOX | Field oxide
metafiles | Files about the script
FF | Fill factor; solar cell
FZ | Float zone crystal
FZ | Float zone grown crystals (Si)
ISIT | Fraunhofer Institute for Si Technology
FAQ | Frequently asked questions
G,
GOX | Gate_oxide
GHz | Gigahertz
GNP | Gross national product
liquid manure | Gülle
H,
hcp | Hexagonal close packed
HF | High frequency
HID | High intensity discharge
HRTEM | High resolution TEM
HR | High Resolution TEM
HRTEM | High resolution transmission electron microscope
HOMO | Highest occupied molecular orbital
HF | Hochfrequenz
HF | Hydrofluoric acid
I,
ITO | Indium tin oxide
IR | Infra red
IR | Infrared
k | Injection ration
IC | Integrated circuit
IC | Integrated circuit
I2 | Ion implantation
J,K,L,
PZT | Lead zirconate titanate
LASER | Light amplification by stimulated emission of radiation
LED | Light emitting diode
LED's | Light emitting diode
LED's | Light_emitting_diode
LCD | Liquid crystal display
LCD's | Liquid crystal display
LCD | Liquid crystal display
LCD | Liquid crystal display
LCD | Liquid crystal display
LEC | Liquid encapsulation technique
LOCOS | Local oxidation of Silicon
LLS | Localized light scattering defect
LPCVD | Low pressure CVD
LUMO | Lowest unoccpied molecular orbital
lm | Lumen
M,
16 Mbit | Megabit
MOS | Metal - Silicon - Semiconductor transistor
MOCVD | Metal Organic CVD
MOS | Metal Oxide Semiconductor
MOS | Metal-oxide-semiconductor
MG-Si | Metallurgical grade Silicon
MEMS | Micro Electro Mechanical Systems
MEMS | Micro electronic and mechanical systems
MBE | Molecular beam epitaxy
mc | Multi_crystalline_(s)
N,
NEMS | Nano Electro Mechanical Systems
NA | Numerical aperture
O,
UOC | Open circuit voltage
UOC | Open circuit voltage
OMEMS | Optical MEMS
OPC | Optical proximity correction
OLED | Organic LED
OLED | Organic LED
OLED's | Organic light emitting diode
OSF | Oxidation induced stacking faults
COx | Oxide capacitance
ONO | Oxide-Nitride-Oxide
ONO | Oxide-nitride-oxide triple layer
ONO | Oxide-nitride-oxide layer sandwich
P,
PMOS | p-channel MOS
PC | Personal Computer
PSM | Phase shift mask
PH3 | Phosphine
PV | Photo voltaic
PVT | Physical vapor transport
PECVD | Plasma enhanced chemical vapor deposition
PO | Plasma oxide
Q,
Q | Q-factor
R,
RADAR | RAdio Detection And Ranging
RF | Radio frequency
RF | Radio frequency
RF MEMS | Radio frequency microelectromechanical systems
RTP | Rapid thermal processing
RIBE | Reactive ion beam etching
RIE | Reactive ion etching
RHEED | Reflection High Energy Electron Diffraction)
R&D | Research and Development
RGS | Ribbon growth on substrate
RT | Room temperature
RMS | Root mean square
RBS | Rutherford back scattering
S,
SEM | Scanning electron microscope
STM | Scanning tunneling microscope
SEM) | Scanning_electron_microscope
STM) | Scanning_electron_microscope_
kseg | Segregation coefficient
SIA | Semiconductor Industry Association
ST | Semicondurctor technology
RSE | Series resistance; solar cell
STI | Shallow trench isolation
ISC | Short circuit current
SiO2 | Silicon dioxide
Si3 N4 | Silicon nitride
SOI | Silicon on insulator
SC | Solar cell, Si
SCR | Space charge region
SOG | Spin-on glass
SRAM | Static random access memory
SKE | Steinkohleneinheit
SQUIDS | Superconducting quantum interference devices
UDD | Supply voltage of integrated circuits
T,
TV' | Television
TMAH | Tetra-Methyl Ammonium Hydroxide
TEOS | Tetraethylorthosilicate
TI | Texas Instruments
a | Thermal expansion coefficient
TEM | Transmission electron microscope
TEM | Transmission electron microscopy
TCO | Transparent conductive oxide
SiHCl3 | Trichlorosilane
W | Tungsten
U,
UV | Ultra violet
UHV | Ultra-high vacuum
UV | Ultraviolet
U | Uranium
V,
VLSI | Very large scale integration

© H. Föll (Semiconductor Technology - Script)