# Doping and Mobility

| Shown are some standard diagrams (without detailed comment at present)
|  | The first graph gives an Arrhenius representation or Arrhenius plot of the intrinisc carrier concentration in Si and Ge for various approximations. The (small) effect of the T3/2 factor can be seen for Ge; it is reponsible for the bending of the rather straight line at high temperatures.

| The next plot shows the intrinsic carrier concentration of several semiconductors as a direct function of the temperature. Note that at room temperature there is a difference of about 7 orders of magnitude.

| This plot shows the dependance of the mobility on doping

| Here is the dependance of the mobility on temperature in the interesting T-range for Si

| This is the combined result of carrier concentration and mobility: The resisitivity of Si as a function of doping for electrons and holes separately.

With frame

3.4.1 Junction Diodes

2.2.2 Doping and Carrier Density

3.3.2 Scaling Laws

Band-Bending and Surface Charge

Solution to 3.1.1

© H. Föll (Semiconductors - Script)