# Indexlist

A, B, C, D, E, F, G, H, I, J, K, L, M, N, O, P, Q, R, S, T, U, V, W, X, Y, Z,

A,
Abbreviations; Index of | [1],
Absolute temperature | [1],
Absorption coefficient | [1],
Acceptors | [1],
Accumulation | [1],
Accumulation; in heterojunctions | [1],
Advanced | [1],
Affinity | [1],
Aluminothermic process for Si production | [1],
Amphoteric doping | [1],
Anisotropic dissolution | [1],
Annealing of defects | [1],
Annealing; after ion implantation | [1],
Approximations; free electron gas | [1],
Area density | [1],
Area emitting LED | [1],
Arrhenius plot | [1],
Auger recombination | [1], [2], [3],
Avalanche breakdown | [1],
Axial modes | [1],
B,
Backbone I module | [1],
Backbone II module | [1],
Ballistic carriers | [1],
Band bending | [1],
Band gaps | [1],
Band-band recombination channel | [1],
Base of a crystal | [1],
Base of bipolar transistor | [1],
Base transit time | [1],
Basics modules | [1],
Bayer Solar | [1],
Beer's law | [1],
Bell laboratories; the most famours research labs in the world around 1960 | [1],
Beweglichkeit; Definition | [1],
Bipolar transistor | [1],
Black body radiation | [1],
Black box; for p-n junctions | [1],
Blakeslee | [1],
Bloch theorem | [1],
Bloch wave | [1],
Blue LEDs | [1],
Bold script for index words | [1],
Bose-Einstein distribution | [1],
Bound exciton | [1],
Boundary conditions; for free electron gas | [1],
Bragg condition | [1],
Bravais lattices | [1],
Brillouin construction | [1],
Brillouin zones | [1],
Buffer layer | [1],
Built-in potential | [1],
Bulk microdefects | [1],
Burgers vector | [1], [2],
Burrus type LED | [1],
C,
Capacitance of a SCR | [1],
Capacitance of SCR | [1], [2],
Capture cross section | [1],
Carborundum | [1],
Carrier statistics | [1],
Casting of Silicon | [1],
Cathodoluminescence | [1],
CELLO technique | [1],
Chemical force | [1],
Chemical potential | [1],
Chemoluminescence | [1],
Cis configuration | [1],
Collector | [1],
Columns in module matirx | [1],
Compliant substrates | [1],
Conducting Polymers | [1],
Conductivity | [1], [2], [3],
Conjugated polymer | [1], [2],
Conservation of crystal momentum | [1],
Conservation of particles/charge | [1],
Constant Potential | [1],
Contamination | [1],
Continuity assumption | [1],
Continuity equation | [1], [2],
Crystal momentum | [1], [2], [3],
Crystal momentum conservation | [1],
Crystal originated particles or pits | [1],
Current density | [1],
Current efficiency of light generation | [1],
Current-voltage characteristics of a p-n-junction | [1],
D,
Dangling bonds | [1],
de Broglie equation | [1],
Debye lenght | [1],
Debye length | [1], [2],
Debye temperature | [1],
Deep levels | [1],
Deep states | [1],
Defect etches | [1],
Density of electrons; basic formula | [1],
Density of States | [1], [2],
Depletion | [1], [2],
Device size considerations | [1],
Device speed | [1],
Diamond; as heat sink | [1],
Dictionary English - German | [1],
Dielectric relaxation time | [1], [2],
Differential gain factor | [1],
Diffusion capacitance | [1], [2],
Diffusion coefficent | [1],
Diffusion coefficients of carriers | [1], [2],
Diffusion current in p-n junction | [1],
Diffusion current; electrical | [1],
Diffusion length | [1], [2], [3],
Diffusion profile | [1],
Diode equation | [1], [2],
Diode type heterojunction | [1],
Direct dissolution | [1],
Direct semiconductors | [1],
Directional solidification | [1],
Discontinuity; in the band diagram | [1],
Dislocations in Si | [1],
Dispersion function | [1],
Distribution function | [1],
Donors | [1],
Dopant activation | [1],
Doping | [1], [2],
Doping, of SiC | [1],
Dose | [1],
Double hetero junction | [1],
Drift current in a p-n junction | [1],
Drift velocity | [1], [2], [3],
Drift velocity; of fly swarm | [1],
Driftgeschwindigkeit | [1],
Ductility of Si; at high temperatures | [1],
Dynamic carrier equilibrium | [1],
Dynamic equilibrium | [1],
E,
Ecercises | [1],
Edge emitting LED | [1], [2],
Effctive mass | [1],
Effective density of states | [1], [2],
EFG solar Si | [1],
Einstein | [1],
Einstein coefficient for stimulated absorption | [1], [2],
Einstein relation | [1], [2],
Einstein-Smoluchowski relations | [1],
Elastic scatteirng | [1],
Electrical diffusion current | [1],
Electroluminescence | [1],
Electrons in semiconductors | [1],
Emission probability for electrons | [1], [2],
Emitter of a bipolar transistor | [1],
Emitter-push effect | [1],
Energy gap | [1],
Energy splitting; at the BZ | [1],
Ensemble average | [1],
Enthalpy | [1],
Entropy | [1],
Entropy of recombination/generation | [1],
Equilibrium condition | [1],
Equipartition theorem | [1],
Equivalent circuit diagram | [1],
Ergodic hypothesis | [1],
Errorfunction | [1],
Esaki | [1],
Etching | [1],
Ewald construction | [1],
Exciton | [1], [2],
Excitons | [1],
External efficiency | [1],
External efficiency of light generation | [1],
F,
Fabry-Perot resonator | [1],
Feldstärke; statt Spannung | [1],
Fermi energy | [1],
Fermis golden rule | [1],
Ficks laws | [1], [2],
Field current in a p-n junction | [1],
Field strength | [1],
First Laser condition | [1],
Flat band | [1],
Fliegenschwarmanalogie | [1],
Fluorescence | [1],
Format Hyperscript | [1],
Forward current in a p-n junction | [1],
Fourier transform of lattice | [1], [2],
Free electron gas | [1],
free electron gas model | [1], [2],
Free energy | [1],
Free enthalpy | [1],
Frequency range of LEDs | [1],
Fresnel laws | [1],
Fundamental absorption | [1], [2],
G,
Gain coefficient | [1], [2],
Gain driven Laser | [1],
Gauss | [1],
Gauss law | [1],
Generation current in a p-n junction | [1],
Generation currents from the SCR | [1], [2], [3],
Generation life time | [1], [2],
Generation rate | [1], [2],
Generation rate in direct semiconductors | [1],
Generation rate; by photons | [1],
Gibbs energy | [1],
Gold; in Si | [1],
Grain boundaries in Si | [1],
Group velocity | [1], [2], [3],
H,
Hamilton operator | [1],
Heterojunctions | [1],
Heterostructures | [1],
High injection | [1],
High injection approximation | [1],
High injection case | [1],
Holes in semiconductors | [1],
Hydrogen passivation | [1],
Hyperscript; format of | [1],
I,
Illustration modules | [1],
Imref | [1],
Index driven Laser | [1],
Index grading | [1],
Index of abbreviations | [1],
Index of key words | [1],
Index of names | [1],
Index of refraction; of semiconductors | [1],
Indirect semiconductors | [1],
Injection luminescence | [1],
Injection ratio | [1],
Intensity of light | [1],
Interface charge | [1],
Interface chemistry | [1],
Interface energy | [1],
Interface states | [1], [2],
Interface structure | [1],
Interface, electronic properties | [1],
Interface, structural properties | [1],
Internal energy | [1],
Intrinsic conductivity of Silicon | [1],
Intrinsic loss coefficient | [1],
Intrinsic Semiconductors | [1], [2],
Inversion | [1], [2], [3],
Ion implantation | [1],
Ionized dopants | [1],
Isoelectronic doping | [1],
Isotropic dissolution | [1],
Isotype heterojunction | [1],
Isotype junctions | [1],
J,
Junctions; simple | [1],
K,
Key word index | [1],
Kick-out diffusion mechanism | [1],
L,
Large signal response. | [1],
Laser | [1], [2],
Laser condition | [1],
Lattice misfit | [1],
Life time | [1], [2], [3],
Life time; formula for the | [1],
Light bulbs; replacement | [1],
Local equilibrium | [1],
Localized excitons | [1],
Localized light scattering defect | [1], [2],
Longitudional modes | [1],
Luminescence | [1],
M,
Majority carriers | [1],
Maser | [1],
Mass action law | [1], [2], [3],
Matrix of modules | [1],
Maxwell equations | [1],
Mean free path | [1],
Mean scattering time | [1],
Melting point anomaly of Si | [1],
Metallurgical junction | [1],
metamaterial | [1],
Micro electronic and mechanical systems | [1],
Micro systems | [1],
Micropipes; in SiC | [1],
Miller indices | [1],
Minority carrier life itme | [1], [2], [3],
Minority carriers | [1],
Misfit dislocations | [1],
Mobility | [1], [2], [3],
Mobility of carriers | [1],
Mobility of electrons; in Si | [1],
Modes of Lasers | [1],
Modulation doping | [1],
Module matrix | [1],
Modules of solar cells | [1],
Moissanite (= natural SiC) | [1],
Monomode Laser | [1],
Motorola | [1], [2],
Multi quantum well | [1],
Multiple quantum well | [1],
N,
n-type semiconductor | [1], [2],
Names: Indiex of | [1],
Net generation of carriers | [1],
Newtons Laws | [1],
O,
Ohmic contacts | [1],
Ohmic resistor | [1],
Ohms law | [1],
Optica lefficiency of light generation | [1],
Optical properties, of SiC | [1],
Optoelectronics defined | [1],
Optoelectronics; and SiC | [1],
P,
p-n-junction | [1],
Parts per quatrillion | [1],
Passivation | [1],
Passivation | [1],
Pauli exclusion principle | [1],
Peierls | [1], [2],
Peierls instability | [1], [2], [3],
Peierls instability and superconductivity | [1], [2],
Peierls transition | [1],
Perfect semiconductors | [1],
Periodic boundary conditions; for the free electron gas | [1],
Phase noise; in Lasers | [1],
Phase space | [1],
Phase velocity | [1], [2],
Phonons | [1], [2],
Phonons; and interaction with electrons | [1],
Phosphorescence | [1],
Photoluminescence | [1],
Photonic crystals | [1],
Physical vapor transport; for SiC crystal growth | [1],
PIN diode | [1],
Piss; for etching Si | [1],
Plasma | [1],
Point defects in Si | [1],
Poisson equation | [1], [2],
Polymorphism | [1],
Polytypes; of SiC | [1],
Potential; for free electron gas | [1],
Proecipitates in Si | [1],
Pumping a Laser | [1],
Pure diffusion currents | [1],
Pythagoras | [1],
Q,
Quantum efficiency of light generation | [1], [2],
Quantum numbers; in the free electron gas model | [1],
Quantum state | [1],
Quantum theory | [1],
Quantum well | [1],
Quantum wells | [1],
Quasi Fermi energies | [1],
Quasi Fermi energy | [1],
Quasi wave vector | [1],
Quasi-particles | [1],
R,
Radiation resistance; of SiC devices | [1],
Radiative channels | [1],
Ramsdell notation; for SiC polytypes | [1],
Rapid thermal processing | [1], [2],
Reciprocal lattice | [1], [2],
Recombination channels | [1], [2],
Recombination coefficient | [1],
Recombination current | [1],
Recombination currrent in a p-n junction | [1],
Recombination life time | [1],
Recombination rate | [1], [2],
Recombination rate; in non-equilibrium | [1],
Recombination volume | [1],
Recombination zone | [1], [2], [3],
Reduced band diagrams | [1],
Refractive index of semiconductors | [1],
Replacing light bulbs | [1],
Resistivity | [1],
Reverse current in a p-n junction | [1],
reverse current; in diodes | [1],
Rows in module matrix | [1],
Ruby | [1],
S,
Saturated electron drift velocity | [1],
Scaling factor | [1],
Scaling laws | [1],
Scattering | [1],
Scattering cross section | [1], [2],
Scattering mechanisms | [1],
Schroedinger equation | [1],
Schrödinger equation | [1],
Second Laser condition | [1],
Secondary mass spectroscopy | [1],
Selective etching | [1],
Series resistance | [1],
Shallow levels | [1],
Shockley-Read-Hall recombination | [1], [2],
Shunt resistance | [1],
SiC | [1],
SiC, doping of | [1],
SiC, electronic properties | [1],
SiC; optical properties | [1],
Single quantum well | [1], [2],
Sintering of Si | [1],
Small diodes | [1],
Small signal response | [1],
Smoluchowski | [1],
Snellius law | [1],
Solar cell | [1],
Solar cell market | [1],
Solar cells | [1], [2],
Solar grade Si | [1],
Solubility limit | [1],
Solubility; dopants in Si | [1],
Space charge layer | [1],
Space charge region | [1],
Specific conductance | [1],
Specific heat of Si | [1],
Specific resistance | [1],
Spherical solar cells from TI | [1],
Spin | [1],
Spin; of the electron | [1], [2],
Spintronic | [1],
Spontaneous emission of a photon | [1], [2],
State; Quantum state | [1],
Steady state (and non-equilibrium) | [1],
Stimulated Emission | [1],
Stimulated emission of a photon | [1],
Stored charge | [1],
Stromdichte; statt Strom | [1],
Strong inversion | [1],
Superradiant LEDs | [1],
Surface concentration; calculation from volume concentration | [1],
Surface density | [1],
Surface emitting LEDs | [1],
Surface generation velocity | [1],
Surface recombination velocity | [1],
Surface states | [1],
Switching behavior (of a diode) | [1],
Symmetry breaking; in polymer conductivity | [1],
T,
Table of Contents | [1],
Thermal conductivity of Si | [1],
Thermal expansion coefficient of Si | [1],
Thermalization | [1],
Thermodynamic potentials | [1],
Thin film solar cells | [1],
Three level system | [1],
Threshold density | [1],
Threshold value for lasing ; gain coefficient | [1], [2],
top | [1],
Total energy (in Schroedinger equation) | [1],
Trans configuration# | [1],
Transients (in current) | [1],
Transients (in voltage) | [1],
Transit time | [1],
Transition rates | [1],
Transparency density | [1],
Transverse modes | [1],
Tunnel diodes | [1],
U,
Ulterviolet catastrophe | [1],
Uncertainty relaltion; for Lasers | [1],
V,
Varactors | [1],
von Karman | [1],
W,
Wacker Siltronic | [1], [2],
Warpage | [1],
Wave function | [1],
Wave length of free electron | [1],
Wave vector | [1], [2], [3],
Weak inversion | [1],
Width of base region; parameter or speed | [1],
Wigner-Seitz cells | [1],
Wire saws | [1],
Workfunction | [1],
Working point | [1],
X,Y,
Yield stress | [1],

© H. Föll (Semiconductors - Script)