# List of Abbraviations

A, B, C, D, E, F, G, H, I, J, K, L, M, N, O, P, Q, R, S, T, U, V, W, X, Y, Z,

A,
abbr. | Abbreviation
a | Activity
w | Angular frequency
ARC | Anti-reflection coating
AsH3 | Arsine
APCVD | Atmospheric pressure CVD
B,
bcc | Body centered cubic
k | Boltzmanns constant
BPSG | Bor-Phosphorous silicite glass
BMD | Bulk micro defects
C,
CRT) | Cathode ray tube
CRT | Cathode ray tubes
r | Charge density
CDE | Chemical dry etching
CMP | Chemical mechanical polishing
CVD | Chemical Vapor Deposition
CMP | Chemical-mechanical polishing
CMP | Chemical-Mechanical polishing
CD | Compact disc
CMOS | Complementary metal oxide semiconductor technology
CMOS | Complementary MOS
C | Coulomb
COPs | Crystal originated particles or pits
j | Current density
j | Current density
j | Current density
CZ | Czochralski grown crystal
D,
i.e. | Das heißt - that's to say; in other words
DK | Dielectric constant
c | dielectric susceptibility
DLP | Digital light processing
m | Dipole moment
DC | Direct current
DRAM | Dynamic random access memory
E,
E | Electrical field strength
D | Electrical flux density
n | Electron density
ESR | Electron spin resonance
q | Elementary charge
S | Entropy
F,
fcc | Face centered cubic
EF | Fermienergy
FOX | Field oxide
metafiles | Files about the script
FPD | Flat panel display
FZ | Float zone crystal
F | Force
G | Free enthalpy
G,
GOX | Gate oxide
GMR | Giant magneto resistance
GNP | Gross national product
H,
hcp | Hexagonally close packed
HRTEM | High resolution transmission electron microscope
HF | Hydrofluoric acid
I,
n | Index of refraction
ITO | Indium tin oxide
k | Injection ration
IC | Integrated circuit
U | Internal energy; also used for enthalpy
I2 | Ion implantation
J,K,L,
PZT | Lead zirconate titanate
Laser | Light amplification by stimulated emission and resonance
LCD | Liquid crystal display
LOCOS | Local oxidation of Silicon
LLS | Localized light scattering defect
FL | Lorentz force
LPCVD | Low pressure CVD
M,
µr | Magnetic (relative) permeability of material
B | Magnetic field strength
H | Magnetic field strength
B | Magnetic flux density
m | Magnetic moment
µo | Magnetic permeability of vacuum
J | Magnetic polarization
J | Magnetic polarization
J | Magnetic polarization
MRAM | Magnetic random access memory
MRI | Magnetic resonance imaging
cmag | Magnetic susceptibiity
M | Magnetization
M | Magnetization
16 Mbit | Megabit
Tm | Melting point
MOS | Metal - Silicon - Semiconductor transistor
MOS | Metal Oxide Semiconductor
MG-Si | Metallurgical grade Silicon
ME | Microelectronic
MEMS | Microelectronic and mechanical systems
µ | Mobility
µ | Mobility
µ | Mobility of carriers
MBE | Molecular beam epitaxy
MPB | Morphological phase boundary
N,
NA | Numerical aperture
O,
OSF | Oxidation induced stacking faults
COx | Oxide capacitance
ONO | Oxide-Nitride-Oxide
ONO | Oxide-nitride-oxide triple layer
P,
PMOS | p-channel MOS
e0 | Permittivity constant
PH3 | Phosphine
PECVD | Plasma enhanced chemical vapor deposition
PO | Plasma oxide
P | Polarization
Q,R,
RTP | Rapid thermal processing
RIBE | Reactive ion beam etching
RIE | Reactive ion etching
ROM | Read only memory
er | Relative dielectric constant; definition
t | Relaxation time
S,
SEM | Scanning electron microscope
STM | Scanning tunneling microscope
kseg | Segregation coefficient
SIA | Semiconductor Industry Association
STI | Shallow trench isolation
S | Siemens
SiO2 | Silicon dioxide
Si3 N4 | Silicon nitride
SOI | Silicon on insulator
s | Specific conductivity
r | Specific resisitvity
r | Specific resistivity
s | Spin quantum number
SOG | Spin-on glass
UDD | Supply voltage of integrated circuits
T,
ar | Temperature coefficient of resistivity
TEOS | Tetraethylorthosilicate
TI | Texas Instruments
theses. | Thesen (sing. thesis; plur. theses)
TEM | Transmission electron microscope
TEM | Transmission electron microscopy
TCO | Transparent conducting oxides
SiHCl3 | Trichlorosilane
W | Tungsten
U,
UHV | Ultra high vacuum
UV | Ultra violet
U | Uranium
V,
VLSI | Very large scale integration
V | Volume
W,
y | Wave function
EA | Work function
X,Y,Z,
e.g. | Zum Beispiel

© H. Föll (Electronic Materials - Script)