# Indexlist

A, B, C, D, E, F, G, H, I, J, K, L, M, N, O, P, Q, R, S, T, U, V, W, X, Y, Z,

A,
Abbreviations; Index of | [1], [2],
Absolute temperature | [1],
Accidental discoveries | [1],
Accumulation | [1], [2],
Accumulators | [1],
Activity instead of concentration | [1],
Advanced | [1], [2],
Aeral density | [1],
Alignment for steppers | [1],
Alignment in lithography | [1],
Alloys (as conductors) | [1],
Amorphization by ion implantation | [1],
Amorphous metals | [1],
Amorphous silicon | [1],
Amperes law | [1],
Angular momentum | [1],
Anisotropic eching | [1],
Anode; battery | [1],
Anodic oxidation | [1],
Anti-ferromagnetic materials | [1],
Anti-reflection coating | [1],
Antiferromagnets | [1],
Arsine | [1],
Aspect ratio | [1],
Atom polarization | [1],
Attenuation index; of light | [1],
B,
Backbone 1 | [1],
Backbone 2 | [1],
Backbone I module | [1], [2],
Backbone II module | [1], [2],
Band gap | [1],
Barium titanate | [1],
Barrel reactor | [1],
Base of bipolar transistor | [1],
Basics modules | [1], [2],
Batch process | [1],
Batteries | [1], [2], [3],
Battery; weight | [1],
Beer; and decay of excited states | [1],
Beweglichkeit; Definition | [1],
Bipolar transistor | [1],
Bipolar transistors | [1],
Birds beak | [1],
Black box; dielectric as | [1],
Bloch wall | [1],
Bohr magneton | [1],
Bohrs model | [1],
Bold script for index words | [1], [2],
Boltzmann distribution | [1], [2],
Bonding techniques | [1],
Books: Askeland; The Science and Engineering of Materials | [1],
Books: Fasching, Werkstoffe für die Elektrotechnik | [1],
Books: Hummel, Electronic Properties of Materials | [1],
Books: Jones; Materials Science for Electrical and Electronic Engineers | [1],
Books: Murarka and Peckerar Electr. Mat. Sci. + Techn. | [1],
Books: Murarka, Peckerar: Electr. Mat. Sci.+Techn. | [1],
Books: Münch, Werkstoffe der Elektrotechnik | [1],
Books: Warnes; Electronic Materials | [1],
Botzmann distribution | [1],
Buffer oxide | [1], [2],
Bulk microdefects | [1],
Buried layer | [1],
C,
CaF2 Birefringence, Purity and 157 nm Technology | [1],
Calcium fluoride lenses | [1],
Capacitor dielectric | [1],
Capacitors | [1],
Cathode (for electron beams) | [1],
Cathode ray tube | [1],
Cathode ray tubes | [1],
Cathode; battery | [1],
Cathodes | [1],
Cermet | [1],
Channel in a MOS transistor | [1],
Chemical dry etching | [1],
Chemical mechanical polishimg | [1], [2],
Chemical vapor deposition | [1],
Chemical-mechanical polishing | [1],
Chip | [1], [2],
Chip area | [1],
Chip power dissipation | [1],
Chip size development | [1],
Chips | [1],
Clausius-Mosotti equation | [1],
Cleaning of equipment | [1],
Cleanroom | [1],
cleanroom garments | [1],
Coercivity | [1],
Collector | [1],
Columns in module matirx | [1], [2],
Comparison of feature size; of ICs | [1],
Complex index of refraction | [1], [2],
Complex magnetic permeability | [1],
Complex notation; for harmonic oscillator | [1],
Conducting polymers | [1],
Conductors; non-metallic | [1],
Constantan | [1],
Contact hole | [1],
Contact materials | [1],
Contact resistance | [1], [2],
Contact voltage | [1], [2],
Contacts | [1],
Contacts between conductors | [1],
Convection | [1],
Crucible growth | [1],
Crystal anisotropy amd magnetism | [1],
Crystal defects in chips | [1],
Curie law | [1],
Curie temperature | [1], [2],
Curie-Weiss law | [1],
Current collector; in battery | [1],
Current density | [1],
Czochralski | [1],
Czochralski method of crystal growth | [1],
D,
Damping constant; for light | [1],
Damping of light | [1],
Dash process | [1], [2],
Dazugehörig, korrekt, eigentlich | [1],
Deal-Grove model | [1],
Debye equations | [1],
Debye length | [1], [2], [3], [4],
Deep ultra-violet | [1],
Defects on chips. | [1],
Density of carriers | [1],
Depletion | [1],
Depolarization factor | [1],
Depth of focus | [1],
Design rules | [1],
Diamagnetic materials | [1], [2],
Diamagnets | [1],
Dictionary English - German | [1], [2],
Dielectric as Black Box | [1],
Dielectric constant | [1], [2],
Dielectric constant; relative | [1],
Dielectric failure | [1],
Dielectric function | [1], [2], [3],
Dielectric function of water | [1],
Dielectric function; black box definition | [1], [2],
Dielectric materials | [1],
Dielectric susceptibility | [1], [2], [3],
Differential operators; in spherical coordinates | [1],
Diffusion barrier | [1], [2],
Diffusion coefficent | [1],
Diffusion current; electrical | [1],
Diffusion limited oxidation reaction | [1],
Diffusion profile | [1],
Dipole moment | [1],
Dipole resonance | [1], [2],
Dislocations; as device killers | [1],
Dispersion relation; of light in vacuum | [1],
Displacement currents | [1],
Dissipation; von Energie | [1],
Distance between charges in dipoles | [1],
Domain structure; from minimizing free enthalpy | [1],
Domain wall energy | [1],
Domain walls | [1],
Doping by diffusion | [1],
Doping; conducting polymers | [1],
Dose of ion implantation | [1],
Drain | [1],
Drain of a MOS transistor | [1],
Drift current | [1],
Drift velocity | [1],
Drift velocity; of fly swarm | [1],
Driftgeschwindigkeit | [1],
Dry etching | [1],
Dry oxidation | [1],
Dynamic random access memory | [1], [2],
E,
Easy directions (in ferromagnets) | [1],
Ecercises | [1], [2],
Eddy currents; in magnetic materials | [1],
Edge coverage | [1],
Edge rounding | [1],
Einstein-Smoluchowski relation | [1], [2],
Electrets | [1],
Electric car | [1],
Electrical breakdown | [1],
Electrical diffusion current | [1],
Electrical displacement | [1],
Electrical flux density | [1],
Electrochemical etching | [1],
Electrochemical potential | [1],
Electrochromic materials | [1],
electrolyte; in battery | [1],
Electrolytes | [1],
Electromagnetic wave; and dielectrics | [1],
Electromigration | [1],
Electron beam lithography | [1], [2],
Electron gas | [1],
Electron microscopes | [1],
Electron spin resonance | [1],
Electron tubes | [1],
Electronic grade Si | [1],
Electronic Polarization | [1],
Electrostriction | [1],
Emitter of a bipolar transistor | [1],
Energie dissipation | [1],
Energy crisis | [1],
Ensemble average | [1],
Entropy | [1], [2],
Entropy; and orientation polarization | [1],
Epitaxy | [1],
Equipment | [1],
Equivalent circuit diagram | [1], [2],
Ergodic hypothesis | [1],
Etching structures | [1],
Etching techniques | [1],
Excimer lasers; for lithography | [1],
Extinction coefficient; for electromagnetic radiation | [1],
Extreme UV lithography | [1],
F,
Feature size; of ICs | [1],
Feldstärke; statt Spannung | [1],
Fermi energy | [1], [2],
Ferrimagnetic materials; and conductivity | [1], [2],
Ferrimagnetism | [1],
Ferrimagnets | [1],
Ferromagnetic materials | [1], [2],
Ferromagnets | [1],
Ficks law | [1], [2],
Field current | [1],
Field emission | [1],
Field emission guns | [1],
Field oxide | [1], [2], [3],
Field strength | [1], [2],
Figure of merit | [1],
Figures of merit | [1],
First law of material science | [1],
First silicon | [1], [2],
Flat band MOS condition | [1],
Flat panel displays | [1],
Flat-panel display | [1],
Flats (on wafers) | [1],
Flats; on wafers | [1],
Fliegenschwarmanalogie | [1],
Float zone | [1],
Flow glass | [1],
Flux of electrical field | [1],
Focus depth | [1],
Format Hyperscript | [1], [2],
Fourier integral | [1],
Fourier integrals | [1],
Fourier Series | [1],
Fourier transform | [1], [2],
Fourier Transforms | [1],
Free electron gas model | [1],
Free enthalpy | [1],
Fresnel laws of diffraction | [1],
Friction | [1],
Friction; and energy dissipaton | [1],
Frictional force; on electron | [1],
Fuel cell | [1],
Fuel cells | [1],
Fuel injector; piezoelectric | [1],
Fundamental unit for magnetism | [1],
G,
Galvanic techniques | [1],
Gate dielectric | [1], [2],
Gate electrode | [1], [2],
Gate of a MOS transistor | [1],
Gate oxide | [1], [2], [3],
Gauss law | [1],
Generation sequence; of chips | [1],
Giant magnetoresistance effect | [1],
Giant magnetostriction | [1], [2],
Gyromagnetic relation | [1],
H,
Hall effect | [1],
Hall Koeffizient | [1],
Hall voltage | [1],
Hard directons (in ferromagnets) | [1],
Hard disc | [1],
Harmonic frequencies | [1],
Harmonic Oscillator | [1],
Harmonic systems | [1],
Heating elements | [1],
Heating with light | [1],
Holes; and thermoeffects | [1],
Hooke's law | [1],
Hyperbolic cotangent | [1],
Hyperscript; format of | [1], [2],
Hystereses losses | [1],
Hystereses losses; for ferromagnets | [1],
Hysteresis | [1],
Hysteresis curve | [1],
I,
Ig Nobel prize | [1],
Illustration modules | [1], [2],
Index of abbreviations | [1], [2],
Index of key words | [1], [2],
Index of names | [1], [2],
Index of refraction | [1], [2],
Indium tin oxide | [1], [2],
Induced dipole moment | [1], [2], [3],
Induced magnetic moment | [1],
Inductors | [1],
Injection ratio | [1],
Integrated capacitor | [1],
Integrated circuit | [1], [2], [3],
Integrated circuits | [1],
Integrated transistor | [1],
Intel | [1],
Intercalation | [1],
Interface polarization | [1],
Intermetal dielectric | [1], [2],
Internal energy | [1],
Internal gettering | [1],
Inversion | [1], [2],
Inversion center; and piezoelectricity | [1],
Inverter; and CMOS | [1],
Ion beam lithography | [1],
Ion conducting solids | [1],
Ion implantation | [1], [2],
Ionic conductors | [1], [2], [3],
Ionic polarization | [1],
Ionics | [1], [2], [3], [4], [5],
Ions | [1],
Irreversible processes | [1],
J,K,
Key word index | [1], [2],
Kramers Kronig relation | [1],
L,
Lambda Sonde | [1],
Langevin function | [1], [2],
Laptop | [1],
Large amounts of money: in chip production | [1],
Laser | [1],
Laser ablation | [1],
Lasers | [1],
Lay-out of a chip | [1],
Layer deposition by sputtering | [1],
Lead frame | [1],
Leads; on integrated circuits | [1],
Learning curve | [1],
Leitfähigkeit; spezifische | [1],
Lenz's law | [1], [2],
Li ion battery | [1],
Line | [1],
Liquid crystals | [1],
Liquid immersion lithography | [1],
Lithography | [1], [2],
Local (electrical) field | [1],
Local oxidation of Silicon | [1],
Lorentz force | [1],
Lorentz model | [1],
Low k dielectrics | [1],
Low pressure CVD | [1],
M,
Magentic (relative) permeability of material | [1],
Magnetic dipoles | [1],
Magnetic domains | [1],
Magnetic energy losses | [1],
Magnetic field strength | [1],
Magnetic flux density | [1],
Magnetic imaging | [1],
Magnetic induction | [1],
Magnetic memories | [1],
Magnetic memory | [1],
Magnetic moment | [1],
Magnetic moments of some materials | [1],
Magnetic monopoles | [1],
Magnetic permeability of the vacuum | [1],
Magnetic polarization | [1],
Magnetic resonance imaging | [1],
Magnetic storage material | [1],
Magnetic susceptibility | [1], [2], [3],
Magnetization | [1],
Magnetostriction | [1], [2],
Mask | [1],
Masking; with SiO2 | [1],
Masks for lithography | [1],
Matrix of modules | [1], [2],
Matthiesen | [1],
Matthiesen rule | [1],
Maxwell equations (and dielectrics) | [1],
Mean field theory of ferromagnetism | [1],
Mean free path | [1],
Mean scattering time | [1], [2],
Mechanical contacts | [1],
Metallic glasses | [1],
Metallurgical grade Si | [1],
Metamagnet | [1],
Micromechanics | [1],
Microrelectronic and mechanical systems | [1],
Microsystems | [1],
Micrrwave oven | [1],
Minimal feature size | [1],
Mixing it in | [1],
Mobility | [1], [2],
Mobility of carriers | [1],
Mobility; and Hall effect | [1],
Mobility; expressed in fundamental terms | [1],
Module matrix | [1], [2],
Molecular Beam Epitaxy | [1],
Monopoles; magnetic | [1],
Moores law | [1],
Morphological phase boundary; in PZT | [1],
MOS transistor; basics | [1],
MOS transistors | [1],
Mu-metal | [1],
Mulit level metallization | [1],
Multi crystalline Si | [1], [2],
N,
n - channel MOS | [1],
n-channel MOS | [1],
Names: Indiex of | [1], [2],
Nano technology | [1],
Nanowires; Si | [1],
Native oxide | [1],
Negative electrode; battery | [1],
Negative resists | [1],
Nernst equation | [1], [2],
Nernst's equation | [1],
Newton fringes | [1],
Neél temperature | [1],
Neél walls | [1],
Non equilibrium thermodynamics | [1],
Non metals (as conductors) | [1],
Nordheims rule | [1],
Notation, Math | [1],
Notch; on a wafer. | [1],
Notches (on wafers) | [1],
Notebook | [1],
Numerical aperture | [1],
O,
Ohm's law | [1],
Ohmic materials | [1],
Ohmic resistor | [1],
Ohms law | [1],
Ohmsche Materialien | [1],
Ohmsches Gesetz | [1],
Orientation polarization | [1], [2],
Oxidation induced stacking faults | [1],
Oxide capacitance | [1],
Oxide CVD | [1],
Oxide deposition | [1],
Oxide Nitride-Oxide triple layer | [1],
Oxygen sensor | [1],
P,
p - channel MOS | [1],
P-n-junctions | [1],
Packaging materials | [1],
Parallel plate reactor | [1],
Paramagentism | [1],
Paramagnetic materials | [1],
Paramagnetism of the free electron gas | [1],
Paramagnets | [1],
Parasitic capacity | [1],
Parasitic transistors; in MOS | [1],
Particles | [1], [2],
Passivation; of Si devices | [1],
Pellicle | [1],
Peltier cooling elements | [1],
Peltier effect | [1],
Peltier effects | [1],
Permanent magnet | [1], [2],
Permanent magnet; ideal case | [1],
Permittivity | [1],
Permittivity constant | [1],
Perovskite structure | [1],
Phase diagram of quartz | [1],
Phononen | [1],
Phonons | [1],
Phosphine | [1],
Photo resist | [1], [2], [3],
Piezoelectric fuel injectores | [1],
Pinning; of domain walls | [1],
Planarization | [1],
Plasma | [1],
Plasma enhanced CVD | [1],
Plasma etching | [1],
Plasma oxide | [1],
Poissons equation | [1], [2],
Polarizability | [1],
Polarization | [1], [2], [3],
Polarization mechansims | [1],
Poly | [1],
Poly Si for crystal growth | [1],
Poly silicon: Variants | [1],
Polyimide | [1],
Polysilicon layers | [1],
Positive electrode; battery | [1],
Positive resist | [1],
Precession of electrons orbits | [1],
Process flow | [1],
Process integration | [1],
Process steps | [1],
Process window | [1],
Process-induced defects | [1],
Pyro electricity | [1],
PZT | [1],
Q,
Quality and quantity | [1],
Quantum theory | [1],
Quartz | [1],
Quartz oscillators | [1], [2],
Quartz; phase diagram | [1],
R,
Rapid thermal processing | [1],
Raw silicon | [1],
RC time constant | [1],
Reactive ion beam etching | [1],
Reactive ion etching | [1],
Reactive sputtering | [1],
Refraining from refractive | [1],
Relative dielectric constant | [1], [2],
Relative magnetic permeability of materials | [1], [2], [3],
Relaxation time | [1], [2], [3],
Remanence | [1],
Resist | [1], [2],
resist development | [1],
Resistors | [1],
Resists | [1],
Resolution limit | [1],
Resonance | [1],
Resonance frequency; harmonic oscillator | [1],
Reticle | [1], [2],
Richardsons equation | [1],
Rock crystal | [1],
Rows in module matrix | [1], [2],
S,
Sacrificial layer | [1],
Saturation magnetization | [1], [2],
Scanning tunneling microscopes | [1],
Scattering mechanisms | [1],
Scattering time, mean | [1],
Schottky effect | [1],
Schrödinger equation | [1],
Screen oxide | [1],
Screening charges | [1],
Seebeck effect | [1], [2],
Seebeck voltage | [1],
Seed crystal | [1],
Segregation coefficient | [1],
Selectivity in etching | [1],
Selenium | [1],
Semiconducting polymers | [1],
Semiconductor Industry Association | [1],
Sensor (solid states | [1],
Sensors | [1],
Shallow trench isolation | [1], [2],
Shrink strategy | [1],
Si precipitates | [1],
Siemens | [1],
Siemens AG | [1], [2],
Siemens process | [1],
Siemens; as measuring unit | [1],
Sign of Hall voltage | [1],
Silicide | [1],
Silicides | [1], [2],
Silicon | [1], [2],
Silicon nitride | [1],
Silicon on insulator | [1],
Silicondioxide | [1], [2],
Silicone nitride | [1],
Silicone nitride deposition | [1],
Silicone vs. Silicon | [1],
SiO2; phase diagram | [1],
Snellius | [1],
Snellius law | [1],
So crystasl | [1],
Soft magnet | [1],
Solar cells | [1], [2],
Solar grade Si | [1],
Solid angle | [1],
Solid electrolytes | [1],
Source | [1],
Source of a MOS transistor | [1],
Special conductors | [1],
Specidic resistivity | [1],
Specific conductivity | [1], [2],
Specific resistivity | [1],
Spectral density | [1],
Spectrum; from Fourier series | [1],
Spherical coordinates | [1],
Spike | [1],
Spiking | [1],
Spin | [1],
Spin-on coating | [1],
Spin-on glass | [1], [2], [3],
Spin-on technique | [1],
Sputtering | [1],
Sputtering techniques | [1],
Stepper | [1], [2],
Streuung an Defekten | [1],
Streuung an Elektronen | [1],
Streuung an Phononen | [1],
Streuung; von Elektronen | [1],
Stromdichte; statt Strom | [1],
Superconductors | [1], [2], [3],
Surface charge (in dielectrics) | [1],
Surface density | [1],
Symmetry breaking; piezoelectricity | [1],
T,
Table of Contents | [1], [2],
Tangens delta | [1],
Target | [1],
Temperature budget | [1],
Temperature coefficient of resistivity | [1],
Tetraethylorthosilicate | [1],
Texture; for magnetic properties | [1],
Themoelectric effect | [1],
Thermal equilibrium | [1],
Thermal oxidation | [1], [2],
Thermocouple | [1],
Thermocouples | [1],
Thermoelectric effects | [1],
Thermoelectric generators | [1],
Thermoelement | [1],
Thermovoltage | [1], [2],
Thomson effect | [1],
Threshold voltage | [1],
Time constant | [1],
Time constant: from RC | [1],
Titanium Nitride | [1],
Tormalin; and pyroelectricity | [1],
Transformer core material | [1],
Transistor | [1],
Transparent conductors | [1],
Trench capacitor | [1], [2],
Trichlorosilane | [1], [2],
Tungsten | [1],
Tungsten CVD | [1],
Tunnel diode | [1],
Tunneling effect | [1],
U,
Unipolar transistors | [1],
Uranium | [1],
V,
Vacuum tube | [1], [2],
Velocity (average) of carriers in a crystal | [1],
Very large scale integration | [1],
Via; connectio between two metal layers in ICs | [1],
Volta potential | [1], [2],
W,
Wacker Siltronic | [1], [2],
Wafer | [1], [2],
Wafer flat | [1],
Wafers | [1],
Water glass | [1],
Wave function | [1],
Weiss field | [1],
Weiss theory of freromagnetism | [1],
Weiss's factor | [1],
Well; for CMOS | [1],
Wet oxidation | [1],
Widerstand; spezifischer | [1],
Width of base region; parameter or speed | [1],
Wiedemann-Franz law | [1],
Work function | [1],
Wrong terms in micro electronics | [1],
X,
X-ray lithography | [1],
X-ray microscope | [1],
X-rays | [1],
Y,
Yield | [1], [2],
Z,
Zone melting | [1],

© H. Föll (Electronic Materials - Script)