# Poly-Silicon

| Here is a large size rendering of the TEM picture of a 16 Mbit DRAM memory cell. A drawing of this cross section can be found in the link.
| .Many details are not visible in this low magnification picture. Below we see the ONO layer between the two poly Si layers at high magnification
|  | The two oxide layers appear white; the nitride layer dark
| Next, we look at a trench capacitor "from above" and not in cross section.
|  | Shown is the "simple" capacitor from the 4 Mbit DRAM generation. ONO us used as dielectric; and the substrate Si served as one electrode.
|  | Again the poly electrode was oxidized for insulation and the trench filled with poly. The smaller (and dendritic) grain structure indicates that a large deposition rate (at somewhat higher pressure) was used; and a little hole remained unfilled in this case.

With frame

6.3.3 CVD for Poly-Silicon, Silicon Nitride and Miscellaneous Materials

Cross Section of 16 Mbit DRAM and 64 Mbit DRAM

Doping Trench walls

© H. Föll (Electronic Materials - Script)